Evaluation of methods to improve EUV OPC model accuracy

被引：1
|
作者：
Coskun, Tamer H. [1 ]
Clifford, Chris [1 ]
Fenger, Germain
Chua, Gek Soon
Standiford, Keith
Schlief, Ralph
Higgins, Craig
Zou, Yi [1 ]
机构：
[1] GLOBALFOUNDRIES, Milpitas, CA USA
来源：
EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY IV | 2013年 / 8679卷
关键词：
Extreme Ultraviolet Lithography; EUV; OPC Model; Flare; EUV Mask; 3D Mask Effects; MPC;
D O I：
10.1117/12.2009281
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Several methods are evaluated to improve the accuracy of extreme ultraviolet (EUV) lithography OPC models by including additional physical effects which are not commonly used in deep ultraviolet (DUV) OPC. The primary additions to the model in this work are model based corrections for flare and two different corrections for mask shadowing effects, commonly referred to as HV bias. The quantitative, incremental, improvement from each of these additions is reported, and the resulting changes in tape-out flow and OPC runtime are discussed
引用
收藏
页数：13
相关论文
共 50 条
  • [21] Improvement of Contact OPC Model Accuracy by Using Corner Chopping
    Huang, Yibin
    Zhang, Wanjuan
    Liu, Qingwei
    Shi, Xuelong
    Gu, Yiming
    Shao, Feng
    Zhang, Liguo
    Zhu, Yu
    Du, Chunshan
    CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2013 (CSTIC 2013), 2013, 52 (01): : 187 - 191
  • [22] Evaluation of Process Variations on OPC Model Predictions
    Oberschmidt, James
    Barai, Samit
    Desouky, Tamer
    Jaiswal, Om Prakash
    Padmawar, Aditya
    Pusuluri, Ramana Murthy
    PHOTOMASK AND NEXT-GENERATION LITHOGRAPHY MASK TECHNOLOGY XVIII, 2011, 8081
  • [23] EUV OPC for the 20nm node and beyond
    Clifford, Chris H.
    Zou, Yi
    Latypov, Azat
    Kritsun, Oleg
    Wallow, Thomas
    Levinson, Harry J.
    Jiang, Fan
    Civay, Deniz
    Standiford, Keith
    Schlief, Ralph
    Sun, Lei
    Wood, Obert R.
    Raghunathan, Sudhar
    Mangat, Pawitter
    Koh, Hui Peng
    Higgins, Craig
    Schefske, Jeffrey
    Singh, Mandeep
    EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY III, 2012, 8322
  • [24] The impact on OPC and SRAF caused by EUV shadowing effect
    Jiang, Fan
    SOLID STATE TECHNOLOGY, 2014, 57 (01) : 27 - 30
  • [25] Pattern-based pre-OPC operation to improve model-based OPC runtime
    Verma, Piyush
    Batarseh, Fadi
    Somani, Shikha
    Wang, Jingyu
    McGowan, Sarah
    Madhavan, Sriram
    PHOTOMASK TECHNOLOGY 2014, 2014, 9235
  • [26] METHODS TO IMPROVE DIGITAL MOS MACROMODEL ACCURACY
    KONG, JT
    OVERHAUSER, D
    IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 1995, 14 (07) : 868 - 881
  • [27] Research on Methods to Improve Glycemic Control Accuracy
    Terenteva, Arina
    Limorenko, Maria
    2021 THE 8TH INTERNATIONAL CONFERENCE ON INDUSTRIAL ENGINEERING AND APPLICATIONS-EUROPE, ICIEA 2021-EUROPE, 2021, : 80 - 83
  • [28] Methods to improve the diagnostic accuracy of malignant mesothelioma
    Dejmek, A
    RESPIRATORY MEDICINE, 1996, 90 (04) : 191 - 199
  • [29] BACKSCATTERING METHODS ARE REFINED TO IMPROVE ACCURACY AND SENSITIVITY
    不详
    LASER FOCUS WITH FIBEROPTIC TECHNOLOGY, 1981, 17 (03): : 97 - 98
  • [30] Statistical optimization of sampling plan and its relation to OPC model accuracy
    Han, Geng
    Brendler, Andrew
    Mansfield, Scott
    Meiring, Jason
    METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XXI, PTS 1-3, 2007, 6518
12345