Evaluation of methods to improve EUV OPC model accuracy

被引：1
|
作者：
Coskun, Tamer H. [1 ]
Clifford, Chris [1 ]
Fenger, Germain
Chua, Gek Soon
Standiford, Keith
Schlief, Ralph
Higgins, Craig
Zou, Yi [1 ]
机构：
[1] GLOBALFOUNDRIES, Milpitas, CA USA
来源：
EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY IV | 2013年 / 8679卷
关键词：
Extreme Ultraviolet Lithography; EUV; OPC Model; Flare; EUV Mask; 3D Mask Effects; MPC;
D O I：
10.1117/12.2009281
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Several methods are evaluated to improve the accuracy of extreme ultraviolet (EUV) lithography OPC models by including additional physical effects which are not commonly used in deep ultraviolet (DUV) OPC. The primary additions to the model in this work are model based corrections for flare and two different corrections for mask shadowing effects, commonly referred to as HV bias. The quantitative, incremental, improvement from each of these additions is reported, and the resulting changes in tape-out flow and OPC runtime are discussed
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收藏
页数：13
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