Protection of low-voltage DC microgrid based on series R-L-C equivalent circuit utilising local measurements

被引:7
作者
Gaurav, Satish [1 ]
Nougain, Vibhuti [1 ]
Panigrahi, Bijaya Ketan [1 ]
机构
[1] Indian Inst Technol, Dept Elect Engn, Hauz Khas, New Delhi, India
关键词
fault currents; distributed power generation; fault location; RLC circuits; equivalent circuits; power distribution faults; power generation faults; power engineering computing; power system measurement; power distribution protection; power generation protection; series R-L-C equivalent circuit; local measurements; low-voltage DC microgrid protection; multithreshold current values; critical fault clearing time post; voltage sources converter; protection device; interfaced power sources; transient response; series resistor-inductor-capacitor equivalent circuit; charged filter capacitors; fault current; Matlab-Simulink; FAULT-DETECTION; COMMUNICATION; NETWORKS; SCHEME; AC;
D O I
10.1049/iet-gtd.2019.1843
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The adoption of low-voltage DC microgrid at a large scale is hindered by the lack of an effective protection scheme. This work proposes a dedicated protection scheme based on multi-threshold current values, which enhances the security of the system by avoiding the risk of false tripping. This is achieved in a few milliseconds without losing the deadline of critical fault clearing time post, which the voltage sources converter interfaced power sources may get disrupted leading to de-energisation of the system. The algorithm relies upon the transient response of the series resistor-inductor-capacitor (R-L-C) equivalent circuit having initially charged filter capacitors. The threshold values of the fault current for each protection device at every network node are set locally by considering the weakest fault criterion. The extensive simulation study has been performed on MATLAB/Simulink for validating the reliability of the proposed algorithm under heavy load transient, at different fault locations, and with high fault resistance.
引用
收藏
页码:3877 / 3885
页数:9
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