Post-annealing effect on the interface morphology and current efficiency of organic light-emitting diodes

被引：13

作者：

Yoon, Youngwoon ^{[1
]}

Lee, Hanju ^{[1
]}

Kim, Taedong ^{[1
]}

Kim, Kyoungchul ^{[1
]}

Choi, Sula ^{[1
]}

Yoo, Hyung Keun ^{[1
]}

Friedman, Barry ^{[2
]}

Lee, Kiejin ^{[1
]}

机构：

[1] Sogang Univ, Inst Cell Damage Control, Dept Phys & Basic Sci, Seoul 121742, South Korea

[2] Sam Houston State Univ, Dept Phys, Huntsville, TX 77341 USA

来源：

SOLID-STATE ELECTRONICS | 2013年 / 79卷

基金：

新加坡国家研究基金会;

关键词：

OLED; Organic; Morphology; Annealing; THIN-FILMS; THERMAL-TREATMENT; DEVICES; LAYER; PERFORMANCE; TEMPERATURE; GROWTH;

D O I：

10.1016/j.sse.2012.07.016

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We studied the post annealing effect on the interface morphology and performance of organic light-emitting diodes (OLEDs) at 80 degrees C substrate temperature. We observed the crystallinity and roughness changes of each layer in an OLED with ITO/CuPc/NPB/Alq(3)/Al structure at various heat-treatment steps by X-ray diffraction (XRD) and atomic force microscopy (AFM). The roughness changes of each layer affected the current-voltage-luminance (IVL) characteristics of the OLEDs. The best annealing step with the best current efficiency was the sample with annealing at 80 degrees C for 2 h after the deposition of all organic layers. (C) 2012 Elsevier Ltd. All rights reserved.

引用

页码：45 / 49

页数：5

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