Post-annealing effect on the interface morphology and current efficiency of organic light-emitting diodes

被引：13
|
作者：
Yoon, Youngwoon [1 ]
Lee, Hanju [1 ]
Kim, Taedong [1 ]
Kim, Kyoungchul [1 ]
Choi, Sula [1 ]
Yoo, Hyung Keun [1 ]
Friedman, Barry [2 ]
Lee, Kiejin [1 ]
机构：
[1] Sogang Univ, Inst Cell Damage Control, Dept Phys & Basic Sci, Seoul 121742, South Korea
[2] Sam Houston State Univ, Dept Phys, Huntsville, TX 77341 USA
来源：
SOLID-STATE ELECTRONICS | 2013年 / 79卷
基金：
新加坡国家研究基金会;
关键词：
OLED; Organic; Morphology; Annealing; THIN-FILMS; THERMAL-TREATMENT; DEVICES; LAYER; PERFORMANCE; TEMPERATURE; GROWTH;
D O I：
10.1016/j.sse.2012.07.016
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We studied the post annealing effect on the interface morphology and performance of organic light-emitting diodes (OLEDs) at 80 degrees C substrate temperature. We observed the crystallinity and roughness changes of each layer in an OLED with ITO/CuPc/NPB/Alq(3)/Al structure at various heat-treatment steps by X-ray diffraction (XRD) and atomic force microscopy (AFM). The roughness changes of each layer affected the current-voltage-luminance (IVL) characteristics of the OLEDs. The best annealing step with the best current efficiency was the sample with annealing at 80 degrees C for 2 h after the deposition of all organic layers. (C) 2012 Elsevier Ltd. All rights reserved.
引用
收藏
页码：45 / 49
页数：5
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