Quasiparticle band structures and optical properties of strained monolayer MoS2 and WS2

被引:826
作者
Shi, Hongliang [1 ]
Pan, Hui [1 ]
Zhang, Yong-Wei [1 ]
Yakobson, Boris I. [2 ,3 ]
机构
[1] ASTAR, Inst High Performance Comp, Singapore 138632, Singapore
[2] Rice Univ, Dept Mech Engn & Mat Sci, Dept Chem, Houston, TX 77005 USA
[3] Rice Univ, Smalley Inst Nanoscale Sci & Technol, Houston, TX 77005 USA
关键词
ELECTRONIC-PROPERTIES; GREENS-FUNCTION;
D O I
10.1103/PhysRevB.87.155304
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The quasiparticle (QP) band structures of both strainless and strained monolayer MoS2 are investigated using more accurate many-body perturbation GW theory and maximally localized Wannier functions (MLWFs) approach. By solving the Bethe-Salpeter equation (BSE) including excitonic effects on top of the partially self-consistent GW(0) (scGW(0)) calculation, the predicted optical gap magnitude is in good agreement with available experimental data. With increasing strain, the exciton binding energy is nearly unchanged, while optical gap is reduced significantly. The scGW(0) and BSE calculations are also performed on monolayer WS2, similar characteristics are predicted and WS2 possesses the lightest effective mass at the same strain among monolayers Mo(S, Se) and W(S, Se). Our results also show that the electron effective mass decreases as the tensile strain increases, resulting in an enhanced carrier mobility. The present calculation results suggest a viable route to tune the electronic properties of monolayer transition-metal dichalcogenides (TMDs) using strain engineering for potential applications in high performance electronic devices. DOI: 10.1103/PhysRevB.87.155304
引用
收藏
页数:8
相关论文
共 34 条
[21]   Two-dimensional atomic crystals [J].
Novoselov, KS ;
Jiang, D ;
Schedin, F ;
Booth, TJ ;
Khotkevich, VV ;
Morozov, SV ;
Geim, AK .
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2005, 102 (30) :10451-10453
[22]   Electronic excitations: density-functional versus many-body Green's-function approaches [J].
Onida, G ;
Reining, L ;
Rubio, A .
REVIEWS OF MODERN PHYSICS, 2002, 74 (02) :601-659
[23]   Tuning the Electronic and Magnetic Properties of MoS2 Nanoribbons by Strain Engineering [J].
Pan, Hui ;
Zhang, Yong-Wei .
JOURNAL OF PHYSICAL CHEMISTRY C, 2012, 116 (21) :11752-11757
[24]  
Perdew JP, 1997, PHYS REV LETT, V78, P1396, DOI 10.1103/PhysRevLett.77.3865
[25]   Low-temperature photoluminescence of oxide-covered single-layer MoS2 [J].
Plechinger, G. ;
Schrettenbrunner, F. -X. ;
Eroms, J. ;
Weiss, D. ;
Schueller, C. ;
Korn, T. .
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2012, 6 (03) :126-128
[26]   Large excitonic effects in monolayers of molybdenum and tungsten dichalcogenides [J].
Ramasubramaniam, Ashwin .
PHYSICAL REVIEW B, 2012, 86 (11)
[27]   Exact Coulomb cutoff technique for supercell calculations [J].
Rozzi, Carlo A. ;
Varsano, Daniele ;
Marini, Andrea ;
Gross, Eberhard K. U. ;
Rubio, Angel .
PHYSICAL REVIEW B, 2006, 73 (20)
[28]   Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2 [J].
Scalise, Emilio ;
Houssa, Michel ;
Pourtois, Geoffrey ;
Afanas'ev, Valery V. ;
Stesmans, Andre .
NANO RESEARCH, 2012, 5 (01) :43-48
[29]   Self-consistent GW calculations for semiconductors and insulators [J].
Shishkin, M. ;
Kresse, G. .
PHYSICAL REVIEW B, 2007, 75 (23)
[30]   Emerging Photoluminescence in Monolayer MoS2 [J].
Splendiani, Andrea ;
Sun, Liang ;
Zhang, Yuanbo ;
Li, Tianshu ;
Kim, Jonghwan ;
Chim, Chi-Yung ;
Galli, Giulia ;
Wang, Feng .
NANO LETTERS, 2010, 10 (04) :1271-1275