Electroluminescence analysis of irradiated GaInP/GaInAs/Ge space solar cells

被引：54

作者：

Hoheisel, Raymond ^{[1
,2
]}

Dimroth, Frank ^{[2
]}

Bett, Andreas W. ^{[2
]}

Messenger, Scott R. ^{[3
]}

Jenkins, Phillip P. ^{[3
]}

Walters, Robert J. ^{[3
]}

机构：

[1] George Washington Univ, Washington, DC 20037 USA

[2] Fraunhofer Inst Solar Energy Syst, D-79110 Freiburg, Germany

[3] USN, Res Lab, Washington, DC 20375 USA

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2013年 / 108卷

关键词：

Solar cell; Space; Degradation; III-V; Electroluminescence; Multi-junction; DEGRADATION;

D O I：

10.1016/j.solmat.2012.06.015

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Electroluminescence measured at different injection current densities is used to study the effect of particle irradiation on GaInP/GaInAs/Ge triple-junction solar cells. By employing the optoelectronic reciprocity relation, the irradiation-induced degradation in the J-V characteristics of all individual subcells and their underlying diode saturation parameters is derived. Also, the dependence of the solar cell irradiation response on the position of the irradiation-induced non-radiative recombination centers within the cell active region, i.e., the quasi-neutral regions and the space charge region, is discussed. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：235 / 240

页数：6

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