Impacts of plasma-induced damage due to UV light irradiation during etching on Ge fin fabrication and device performance of Ge fin field-effect transistors

被引：35

作者：

Mizubayashi, Wataru ^{[1
]}

Noda, Shuichi ^{[2
]}

Ishikawa, Yuki ^{[1
]}

Nishi, Takashi ^{[1
]}

Kikuchi, Akio ^{[2
]}

Ota, Hiroyuki ^{[1
]}

Su, Ping-Hsun ^{[3
]}

Li, Yiming ^{[3
]}

Samukawa, Seiji ^{[1
,2
,4
]}

Endo, Kazuhiko ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan

[2] Tohoku Univ, Inst Fluid Sci, Sendai, Miyagi 9808577, Japan

[3] Natl Chiao Tung Univ, Hsinchu 300, Taiwan

[4] Tohoku Univ, AIMR, Sendai, Miyagi 9800811, Japan

来源：

APPLIED PHYSICS EXPRESS | 2017年 / 10卷 / 02期

关键词：

Device performance - Fin field effect transistors - FinFETs - Neutral beam etching - Plasma induced damage - UV-light irradiation;

D O I：

10.7567/APEX.10.026501

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the impacts of plasma-induced damage due to UV light irradiation during etching on Ge fin fabrication and the device performance of Ge fin field-effect transistors (Ge FinFETs). UV light irradiation during etching affected the shape of the Ge fin and the surface roughness of the Ge fin sidewall. A vertical and smooth Ge fin could be fabricated by neutral beam etching without UV light irradiation. The performances of Ge FinFETs fabricated by neutral beam etching were markedly improved as compared to those of Ge FinFETs fabricated by inductively coupled plasma etching, in which the UV light has an impact. (C) 2017 The Japan Society of Applied Physics

引用

页数：4

共 12 条

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