Strain state of GaN nanodisks in AlN nanowires studied by medium energy ion spectroscopy

被引：6

作者：

Jalabert, D. ^{[1
]}

Cure, Y. ^{[2
,3
]}

Hestroffer, K. ^{[2
,3
]}

Niquet, Y. M. ^{[4
]}

Daudin, B. ^{[2
,3
]}

机构：

[1] CEA INAC UJF Grenoble 1 UMR E, SP2M, LEMMA, F-38054 Minatec Grenoble, France

[2] Univ J Fourier, Inst Neel, CNRS, CEA CNRS Grp Nanophys & Semicond, F-38054 Grenoble, France

[3] CEA Grenoble, INAC, SP2M, F-38054 Grenoble, France

[4] CEA Grenoble, INAC, SP2M L Sim, F-38054 Grenoble, France

来源：

NANOTECHNOLOGY | 2012年 / 23卷 / 42期

关键词：

LIGHT-EMITTING-DIODES; MOLECULAR-BEAM EPITAXY; QUANTUM-WELLS; PHOTOLUMINESCENCE; SUBSTRATE;

D O I：

10.1088/0957-4484/23/42/425703

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Medium energy ion spectroscopy experiments have been performed on an ensemble of nanowires deposited by molecular beam epitaxy on Si(111), taking advantage of their reduced in-plane mosaicity. In particular, the strain in nanometric GaN insertions embedded in AlN sections deposited on top of GaN nanowires has been determined. The measured strain is consistent with atomistic valence force field calculations. This opens the way for the structural study of a new range of discontinuous nanowire-based nanostructures by medium energy ion spectroscopy and to the determination of the strain profile of nanodisks in nanowires at the monolayer scale.

引用

页数：6

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