RTS noise characterization of HfOx RRAM in high resistive state

被引：46
作者：
Puglisi, Francesco M. [1 ]
Pavan, Paolo [1 ]
Padovani, Andrea [2 ]
Larcher, Luca [2 ]
Bersuker, Gennadi [3 ]
机构：
[1] Univ Modena & Reggio Emilia, Dipartimento Ingn Informaz, I-41125 Modena, Italy
[2] Univ Modena & Reggio Emilia, Dipartimento Sci & Metodi Ingn, I-42122 Reggio Emilia, Italy
[3] SEMATECH, Albany, NY 12203 USA
来源：
SOLID-STATE ELECTRONICS | 2013年 / 84卷
关键词：
Random telegraph noise; Time lag plot; Hidden markov model; Resistive random access memory; Trap assisted conduction;
D O I：
10.1016/j.sse.2013.02.023
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper we analyze Random Telegraph Signal (RTS) noise and Power Spectral Density (PSD) in hafnium-based RRAMs. RTS measured in HRS exhibits fast and slow multilevel switching events. RTS characteristics are examined through novel color-coded time-lag plots and Hidden Markov Model (HMM) time-series analyses. Results are validated by comparing simulated and experimental PSD. Noise is examined at different reset conditions to provide an insight into the conduction mechanisms in HRS. Higher reset voltages are found to result in greater RTS complexity due to a larger number of active traps as confirmed by PSD. (C) 2013 Elsevier Ltd. All rights reserved.
引用
收藏
页码：160 / 166
页数：7
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