Superconducting Dome in a Gate-Tuned Band Insulator

被引：933

作者：

Ye, J. T. ^{[1
,2
]}

Zhang, Y. J. ^{[1
,2
]}

Akashi, R. ^{[1
,2
]}

Bahramy, M. S. ^{[3
]}

Arita, R. ^{[1
,2
,3
]}

Iwasa, Y. ^{[1
,2
,3
]}

机构：

[1] Univ Tokyo, Quantum Phase Elect Ctr, Bunkyo Ku, Tokyo 1138656, Japan

[2] Univ Tokyo, Dept Appl Phys, Bunkyo Ku, Tokyo 1138656, Japan

[3] RIKEN, Correlated Electron Res Grp, Wako, Saitama 3510198, Japan

来源：

SCIENCE | 2012年 / 338卷 / 6111期

基金：

日本科学技术振兴机构; 日本学术振兴会;

关键词：

TRANSITION-TEMPERATURE; SEMICONDUCTING SRTIO3; MOLYBDENUM-DISULFIDE; TRANSISTORS; PHYSICS; STATE;

D O I：

10.1126/science.1228006

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

A dome-shaped superconducting region appears in the phase diagrams of many unconventional superconductors. In doped band insulators, however, reaching optimal superconductivity by the fine-tuning of carriers has seldom been seen. We report the observation of a superconducting dome in the temperature-carrier density phase diagram of MoS2, an archetypal band insulator. By quasi-continuous electrostatic carrier doping achieved through a combination of liquid and solid gating, we revealed a large enhancement in the transition temperature T-c occurring at optimal doping in the chemically inaccessible low-carrier density regime. This observation indicates that the superconducting dome may arise even in doped band insulators.

引用

页码：1193 / 1196

页数：4

共 32 条

[1] Colloquium:: Metallic behavior and related phenomena in two dimensions
Abrahams, E
Kravchenko, SV
Sarachik, MP
[J]. REVIEWS OF MODERN PHYSICS, 2001, 73 (02) : 251 - 266
[2] Electrostatic modification of novel materials
Ahn, C. H.
Bhattacharya, A.
Di Ventra, M.
Eckstein, J. N.
Frisbie, C. Daniel
Gershenson, M. E.
Goldman, A. M.
Inoue, I. H.
Mannhart, J.
Millis, Andrew J.
Morpurgo, Alberto F.
Natelson, Douglas
Triscone, Jean-Marc
[J]. REVIEWS OF MODERN PHYSICS, 2006, 78 (04) : 1185 - 1212
[3] Superconductor-insulator transition in La2-xSrxCuO4 at the pair quantum resistance
Bollinger, A. T.
Dubuis, G.
Yoon, J.
Pavuna, D.
Misewich, J.
Bozovic, I.
[J]. NATURE, 2011, 472 (7344) : 458 - 460
[4] Ripples and Layers in Ultrathin MoS2 Membranes
Brivio, Jacopo
Alexander, Duncan T. L.
Kis, Andras
[J]. NANO LETTERS, 2011, 11 (12) : 5148 - 5153
[5] Electric field control of the LaAlO3/SrTiO3 interface ground state
Caviglia, A. D.
Gariglio, S.
Reyren, N.
Jaccard, D.
Schneider, T.
Gabay, M.
Thiel, S.
Hammerl, G.
Mannhart, J.
Triscone, J. -M.
[J]. NATURE, 2008, 456 (7222) : 624 - 627
[6] Tunable Rashba Spin-Orbit Interaction at Oxide Interfaces
Caviglia, A. D.
Gabay, M.
Gariglio, S.
Reyren, N.
Cancellieri, C.
Triscone, J. -M.
[J]. PHYSICAL REVIEW LETTERS, 2010, 104 (12)
[7] Checkelsky JG, 2012, NAT PHYS, V8, P729, DOI [10.1038/NPHYS2388, 10.1038/nphys2388]
[8] MOBILITY OF CHARGE CARRIERS IN SEMICONDUCTING LAYER STRUCTURES
FIVAZ, R
MOOSER, E
[J]. PHYSICAL REVIEW, 1967, 163 (03): : 743 - &
[9] ELECTRONIC-PROPERTIES OF INTERCALATION COMPLEXES OF THE TRANSITION-METAL DICHALCOGENIDES
FRIEND, RH
YOFFE, AD
[J]. ADVANCES IN PHYSICS, 1987, 36 (01) : 1 - 94
[10] Metal-insulator transition and superconductivity in boron-doped diamond
Klein, T.
Achatz, P.
Kacmarcik, J.
Marcenat, C.
Gustafsson, F.
Marcus, J.
Bustarret, E.
Pernot, J.
Omnes, F.
Sernelius, Bo E.
Persson, C.
da Silva, A. Ferreira
Cytermann, C.
[J]. PHYSICAL REVIEW B, 2007, 75 (16)

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