High power 4H-SiC thyristors

被引:2
|
作者
Palmour, JW [1 ]
Singh, R [1 ]
Waltz, DG [1 ]
机构
[1] CREE RES INC,DURHAM,NC 27713
关键词
D O I
10.1109/DRC.1996.546312
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:54 / 55
页数:2
相关论文
共 50 条
  • [21] Feasibility of the Visible Light-Activation of 4H-SiC Thyristors
    Liu, Wentao
    Chen, Zhiming
    Li, Lianbi
    2012 7TH INTERNATIONAL CONFERENCE ON SYSTEM OF SYSTEMS ENGINEERING (SOSE), 2012, : 171 - 174
  • [22] Modelling and Simulation of Design Variants for the Development of 4H-SiC Thyristors
    Maria Arshad
    Erum Jamil
    Ahmed Shuja
    Faraz Qayyum
    Gul Hassan
    Silicon, 2022, 14 : 10313 - 10325
  • [23] Optical triggering of 12 kV, 100 A 4H-SiC thyristors
    Rumyantsev, S. L.
    Levinshtein, M. E.
    Shur, M. S.
    Saxena, T.
    Zhang, Q. J.
    Agarwal, A. K.
    Palmour, J. W.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2012, 27 (01)
  • [24] Modelling and Simulation of Design Variants for the Development of 4H-SiC Thyristors
    Arshad, Maria
    Jamil, Erum
    Shuja, Ahmed
    Qayyum, Faraz
    Hassan, Gul
    SILICON, 2022, 14 (16) : 10313 - 10325
  • [25] Temperature dependence of turn-on process in 4H-SiC thyristors
    Dyakonova, NV
    Levinshtein, ME
    Palmour, JW
    Rumyantsev, SL
    Singh, R
    ELECTRONICS LETTERS, 1997, 33 (10) : 914 - 915
  • [26] dV/dt effect in high-voltage (1.5 kV) 4H-SiC thyristors
    Yurkov, SN
    Mnatsakanov, TT
    Levinshtein, ME
    Ivanov, PA
    Agarwal, AK
    Palmour, JW
    SOLID-STATE ELECTRONICS, 2005, 49 (12) : 2011 - 2015
  • [27] High-Voltage 4H-SiC Thyristors With a Graded Etched Junction Termination Extension
    Paques, Gontran
    Scharnholz, Sigo
    Dheilly, Nicolas
    Planson, Dominique
    De Doncker, Rik W.
    IEEE ELECTRON DEVICE LETTERS, 2011, 32 (10) : 1421 - 1423
  • [28] 4H-SiC p-n diodes and gate turnoff thyristors for high-power, high-temperature applications
    Agarwal, AK
    Seshadri, S
    MacMillan, M
    Mani, SS
    Casady, J
    Sanger, P
    Shah, P
    SOLID-STATE ELECTRONICS, 2000, 44 (02) : 303 - 308
  • [29] High-performance power BJTs in 4H-SiC
    Huang, CF
    Cooper, JA
    IEEE LESTER EASTMAN CONFERENCE ON HIGH PERFORMANCE DEVICES, PROCEEDINGS, 2002, : 50 - 57
  • [30] A novel high power bipolar transistor in 4H-SiC
    Zhao, JH
    Li, X
    Fursin, L
    Alexandrov, P
    Pan, M
    Weiner, M
    Burke, T
    Khalil, G
    2001 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, PROCEEDINGS, 2001, : 231 - 234