Role of the temperature in the chaotic behavior of a p-n junction

被引：2
|
作者：
Donoso, A
Machado, E
Valdivia, D
Fehr, C
Gutierrez, G
机构：
[1] UNIV CENT VILLAS,DEPT PHYS,SANTA CLARA,CUBA
[2] UNIV SIMON BOLIVAR,DEPT PHYS,CARACAS 1086A,VENEZUELA
来源：
PHYSICS LETTERS A | 1997年 / 225卷 / 1-3期
关键词：
D O I：
10.1016/S0375-9601(96)00838-9
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We have measured the temperature dependence of first-return maps for the maximum forward current through a driven diode oscillator circuit. We have constructed the bifurcation diagram with temperature as the control parameter and generalized the model of Rollins and Hunt to include the temperature.
引用
收藏
页码：79 / 84
页数：6
相关论文
共 50 条
  • [41] The Behavior of Series Resistance of a P-N Junction: the Diode and the Solar Cell Cases
    Bueno, Poliana H.
    Costa, Diogo F.
    Eick, Alexander
    Carvalho, Andre C.
    Monteiro, Davies W. L.
    PHYSICS, SIMULATION, AND PHOTONIC ENGINEERING OF PHOTOVOLTAIC DEVICES V, 2016, 9743
  • [42] Improving Sensitivity of p-n Junction Temperature Sensor by Carrier Lifetime Modification
    Poyai, A.
    Ratanaudomphisut, E.
    Supadech, J.
    Klunngien, N.
    Hruanan, C.
    Sophitpan, S.
    SMART MATERIALS, 2008, 55-57 : 517 - 520
  • [43] New method of dispersion minimization of Si p-n junction temperature sensors
    Yatsuk, V. O.
    Basalkevych, O. Ye.
    Yatsuk, Yu. V.
    Sachenko, A. O.
    2007 IEEE SENSORS APPLICATIONS SYMPOSIUM, 2007, : 41 - +
  • [44] PULSE MEASUREMENTS OF TRANSIENT THERMAL RESPONSE AND TEMPERATURE OF AVALANCHING P-N JUNCTION
    NIGRIN, J
    ELECTRONICS LETTERS, 1971, 7 (17) : 481 - &
  • [45] Temperature-dependent transport properties in oxide p-n junction above room temperature
    Liu Guo-Zhen
    Jin Kui-Juan
    He Meng
    Qiu Jie
    Xing Jie
    Lu Hui-Bin
    Yang Guo-Zhen
    CHINESE PHYSICS LETTERS, 2008, 25 (06) : 2209 - 2210
  • [46] P-N JUNCTION AS AN ULTRALINEAR CALCULABLE THERMOMETER
    VERSTER, TC
    ELECTRONICS LETTERS, 1968, 4 (09) : 175 - &
  • [47] On the tensosensitivity of a p-n junction under illumination
    G. Gulyamov
    A. G. Gulyamov
    Semiconductors, 2015, 49 : 819 - 822
  • [48] COMMENTS ON SATURATED PHOTOVOLTAGE OF A P-N JUNCTION
    KAO, YC
    SCHRODER, DK
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (04) : 384 - &
  • [49] RECOMBINATION RADIATION OF A P-N JUNCTION IN INAS
    ANISIMOV.ID
    YUNGERMA.VM
    KULYMANO.AV
    SOVIET PHYSICS SOLID STATE,USSR, 1965, 6 (08): : 2036 - &
  • [50] The semiconductor p-n junction "ultimate lamp"
    Holonyak, N
    MRS BULLETIN, 2005, 30 (07) : 515 - 517
12345