Structural, resistive switching and charge transport behaviour of (1-x)La0.7Sr0.3MnO3•(x)ZnO composite system

With the increase in data-driven frameworks, the demand for non-volatile memory has increased and resistive switching-based memory is one of them. In this study, the structural, charge transport and the current vs. voltage (I-V) behaviour of (1-x)La0.7Sr0.3MnO3.(x)ZnO composite systems were investigated and observed that, they exhibit bipolar resistive switching behaviour. The oxygen vacancy, oxygen ions and interfacial layers play an important role in the resistive switching behaviour. From the XPS analysis, it is observed that the oxygen-deficient region increases with the increasing concentration of ZnO. The sample with x = 0.050 shows better resistive switching behaviour and high ON/OFF current ratio as compared with the x = 0.005 and 0.010 samples. The Ohmic and Schottky emissions are found to be responsible for the conduction mechanism. The shifting in the metal-insulator transition temperature (T-MI) towards the low temperature is observed from the resistivity vs. temperature plot with the increasing concentration of the ZnO.