Transversal range straggling of 40 keV-2 MeV tungsten ions implanted in SiO2

被引:1
作者
Chiu, WJ
Liang, JH [1 ]
Hsu, JY
Hsu, WS
Tzen, MS
机构
[1] Natl Tsing Hua Univ, Dept Engn & Syst Sci, Hsinchu 30043, Taiwan
[2] Natl Tsing Hua Univ, Nucl Sci & Technol Dev Ctr, Hsinchu 30043, Taiwan
关键词
ion implantation; projected range; longitudinal range straggling; transversal range straggling; secondary ion mass spectrometry;
D O I
10.1016/S0168-583X(98)01022-2
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
This paper presents an experimental investigation of transversal range straggling of tungsten ions implanted in SiO2 for a wide incident-ion-energy level of 40 keV-2 MeV. Tungsten ions were implanted into SiO2 films tilted by angles of 7 degrees and 55 degrees with respect to the axis normal to the specimen for each incident-ion energy. The depth profiles of implanted tungsten ions were measured and fitted by using secondary ion mass spectrometry (SIMS) and Gaussian distribution, respectively. The measured values of projected range (R-p), longitudinal range straggling (Delta R-p) and transversal range straggling (Delta R-t) were determined from the corresponding Gaussian-fitted distributions of 7 degrees and 55 degrees implants along with Furukawa and Matsumura's method. The calculated values of R-p, Delta R-p and Delta R-t yielded by the SRIM Monte-Carlo simulation code are also presented herein for comparison. It was found that the calculated values of R-p, Delta R-p and Delta R-t agreed to the corresponding measured values within (on average) 19%, 21% and 14%, respectively. The discrepancies between the calculated and measured values of both Delta R-p and Delta R-t become significant at rather low incident-ion energies. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:442 / 445
页数:4
相关论文
共 50 条
[41]   Transportation of carriers in silicon implanted SiO2 films during ionizing radiation [J].
Chen, Ming ;
Zhang, Zhengxuan ;
Wei, Xing ;
Bi, Dawei ;
Zou, Shichang ;
Wang, Xi .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2012, 272 :266-270
[42]   Characterization of implantation induced defects in si-implanted SiO2 film [J].
Hao, Xiaopeng ;
Zhou, Chunlan ;
Yu, Runsheng ;
Wang, Baoyi ;
Wei, Long .
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2008, 8 (03) :1350-1354
[43]   Characterization of Hot-Implanted Fe near the SiO2/Si Interface [J].
Hoshino, Yasushi ;
Arima, Hiroki ;
Saito, Yasunao ;
Nakata, Jyoji .
JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (03)
[44]   Mechanism and enhancement of photoluminescence from silicon nanocrystals implanted in SiO2 matrix [J].
吴志永 ;
刘克新 ;
任晓堂 .
Chinese Physics B, 2010, 19 (09) :621-625
[45]   Dose dependence of room temperature photoluminescence from Si implanted SiO2 [J].
Cheylan, S ;
Manson, NB ;
Elliman, RG .
LIGHT EMISSION FROM SILICON: PROGRESS TOWARDS SI-BASED OPTOELECTRONICS, 1999, 77 :213-216
[46]   Dose dependence of room temperature photoluminescence from Si implanted SiO2 [J].
Cheylan, S ;
Manson, NB ;
Elliman, RG .
JOURNAL OF LUMINESCENCE, 1998, 80 (1-4) :213-216
[47]   Evaluation of the excess and clustered silicon profiles in a silicon implanted SiO2 layer [J].
Nicotra, G. ;
Franzo, G. ;
Spinella, C. .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2007, 257 (1-2 SPEC. ISS.) :104-107
[48]   SHI induced re-crystallization of Ge implanted SiO2 films [J].
Rao, N. Srinivasa ;
Pathak, A. P. ;
Sathish, N. ;
Devaraju, G. ;
Khan, S. A. ;
Saravanan, K. ;
Panigrahi, B. K. ;
Nair, K. G. M. ;
Avasthi, D. K. .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2010, 268 (11-12) :1741-1743
[49]   Implantation of P ions in SiO2 layers with embedded Si nanocrystals [J].
Kachurin, GA ;
Cherkova, SG ;
Volodin, VA ;
Kesler, VG ;
Gutakovsky, AK ;
Cherkov, AG ;
Bublikov, A ;
Tetelbaum, DI .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2004, 222 (3-4) :497-504
[50]   Photoluminescence and structural studies of Tb and Eu implanted at high temperatures into SiO2 films [J].
Bregolin, F. L. ;
Sias, U. S. ;
Behar, M. .
JOURNAL OF LUMINESCENCE, 2013, 135 :232-238