Silicon-germanium films deposited by low-frequency plasma-enhanced chemical vapor deposition:: Effect of H2 and Ar dilution

被引:24
作者
Kosarev, A [1 ]
Torres, A
Hernandez, Y
Ambrosio, R
Zuniga, C
Felter, TE
Asomoza, R
Kudriavtsev, Y
Silva-Gonzalez, R
Gomez-Barojas, E
Ilinski, A
Abramov, AS
机构
[1] INAOE, Puebla 7200, Mexico
[2] Lawrence Livermore Natl Lab, Livermore, CA 94550 USA
[3] Inst Politecn Nacl, Ctr Invest & Estudios Avanzados, Mexico City 07360, DF, Mexico
[4] Benemerita Univ Autonoma Puebla, Inst Fis, Puebla 72570, Mexico
[5] Benemerita Univ Autonoma Puebla, CIDS, IC, Puebla 72000, Mexico
[6] Benemerita Univ Autonoma Puebla, Puebla 72050, Mexico
[7] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
关键词
D O I
10.1557/JMR.2006.0013
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have studied structure and electrical properties of Si1-YGeY:H films deposited by low-frequency plasma-enhanced chemical vapor deposition over the entire composition range from Y = 0 to Y = 1. The deposition rate of the films and their structural and electrical properties were measured for various ratios of the germane/silane feed gases and with and without dilution by Ar and by H-2. Structure and composition was studied by Auger electron spectroscopy (AES), secondary ion mass spectroscopy (SIMS), and Fourier transform infrared (FTIR) spectroscopy. Surface morphology was characterized by atomic force microscopy (AFM). We found that the deposition rate increased with Y, maximizing at Y = I without dilution. The relative rate of Ge and Si incorporation is affected by dilution. Hydrogen preferentially bonds to silicon. Hydrogen content decreases for increasing Y. In addition, optical measurements showed that as Y goes for 0 to 1, the Fermi level moves from mid gap to the conduction band edge; i.e., the films become more n-type. No correlation was found between the pre-exponential and the activation energy of conductivity. The behavior of the conductivity gamma-factor suggests a local minimum in the density of states at E approximate to 0.33 eV for the films grown with or without H-dilution and E approximate to 0.25 eV for the films with Ar dilution.
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收藏
页码:88 / 104
页数:17
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