Comparison of neutron irradiation effects in AlGaN/AlN/GaN, AlGaN/GaN, and InAlN/GaN heterojunctions

被引：29

作者：

Polyakov, A. Y. ^{[1
]}

Smirnov, N. B. ^{[1
]}

Govorkov, A. V. ^{[1
]}

Kozhukhova, E. A. ^{[1
]}

Pearton, Stephen J. ^{[2
]}

Ren, Fan ^{[3
]}

Liu, Lu ^{[3
]}

Johnson, J. W. ^{[4
]}

Lim, Wantae

Kolin, N. G. ^{[5
]}

Veryovkin, S. S. ^{[5
]}

Ermakov, V. S. ^{[5
]}

机构：

[1] Inst Rare Met, Moscow 119017, Russia

[2] Univ Florida, Dept Mat Sci Engn, Gainesville, FL 32611 USA

[3] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

[4] Kopin Corp, Westborough, MA 01581 USA

[5] Karpov Inst Phys Chem, Fed State Unitary Enterprise, Obninsk Branch, Obninsk 249033, Kaluga Region, Russia

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2012年 / 30卷 / 06期

基金：

俄罗斯基础研究基金会;

关键词：

ELECTRON-MOBILITY TRANSISTORS; HETEROSTRUCTURES; FLUENCE;

D O I：

10.1116/1.4766727

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Neutron irradiation effects were compared for AlGaN/AlN/GaN high electron mobility transistor (HEMT) structures with Al composition in the AlGaN barrier ranging from 20% to 50%, "standard" Al0.25Ga0.75N/GaN HEMTs and for InAlN/GaN HEMTs with InAlN barrier lattice matched to GaN (17% In in the barrier). These samples were exposed to fast reactor neutrons with average energy similar to 2 MeV and fluence of 1-3 x 10(15) cm(-2). The main effect of irradiation was the decrease of two-dimensional electron gas (2DEG) mobility and a positive shift in the threshold voltage corresponding to 2DEG depletion in capacitance-voltage characteristics. For the highest fluences, there was a decrease in both 2DEG concentration and accumulation capacitance, with the effect being strongest for AlGaN/AlN/GaN HEMTs with the highest Al composition and for InAlN/GaN HEMTs. The results correlate with the increase in concentration of deep negatively charged traps in the AlGaN or InAlN barrier with neutron dose. For applications in which tolerance to neutron irradiation is a concern, current high Al content AlGaN/AlN/GaN HEMTs and also InAlN/GaN structures are less radiation hard than low-Al-composition AlGaN/AlN/GaN and Al0.25Ga0.75N/GaN HEMTs. (C) 2012 American Vacuum Society. [http://dx.doi.org/10.1116/1.4766727]

引用

页数：7

共 29 条

[1] Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures [J].