Enhancement of hydrogen gas-sensing properties of SnO2-based thin film with Ni surface modification

被引：0

作者：

Lei, W ^{[1
]}

Jun, D ^{[1
]}

Mao, CH ^{[1
]}

Xiong, YH ^{[1
]}

Yang, ZM ^{[1
]}

机构：

[1] Gen Res Inst NonFerrous Met, Beijing 100088, Peoples R China

来源：

ICEMI 2005: CONFERENCE PROCEEDINGS OF THE SEVENTH INTERNATIONAL CONFERENCE ON ELECTRONIC MEASUREMENT & INSTRUMENTS, VOL 5 | 2005年

关键词：

tin oxide; thin film; modification; gas sensors;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Surface modification is an effective method to enhance sensitivity and selectivity of SnO2-based gas sensors. In this paper, we present the results concerning the Ni surface modification of tin dioxide thin films deposited by dc reactive magnetron sputtering. Ni overlayers with thickness of about 5 rim and 10nm have been sputtered on the top of SnO2 samples, and then have been annealed at 873K for 3 hours in air. The surface morphology of the samples has been have been observed by FESEM. X-ray photoelectron spectra have been used to describe the surface composition of the films. In addition, the electric response of the SnO2-based sensors towards different H-2 concentration (1000ppm similar to 7000ppm) in air has been considered. The studies found that the Ni-modified SnO2 samples showed an enhancement of the sensitivity towards H-2 as compared to the unmodified SnO2 samples. The homogeneousness and the amount of the Ni thin layer seem essential to determine the properties of the SnO2 films as H-2 gas sensors.

引用

页码：531 / 535

页数：5

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