New parametric point spread function calibration methodology for improving the accuracy of patterning prediction in electron-beam lithography

被引:9
作者
Liu, Chun-Hung [1 ]
Ng, Hoi-Tou [1 ]
Tsai, Kuen-Yu [1 ]
机构
[1] Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan
来源
JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS | 2012年 / 11卷 / 01期
关键词
point spread function; electron-beam lithography; electron-beam-direct-write lithography; proximity effects; proximity-effects correction; patterning prediction; PROXIMITY EFFECT CORRECTION; MONTE-CARLO; SIMULATION; EXPOSURE;
D O I
10.1117/1.JMM.11.1.013009
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Electron-beam-direct-write lithography has been considered a candidate next-generation technique for achieving high resolution. An accurate point spread function (PSF) is essential for reliable patterning prediction and proximity-effects correction. It can be derived via an effective parametric PSF calibration methodology, typically involving the fitting of the absorbed energy distribution (AED) from an electron-scattering simulation. However, the existing parametric PSF calibration methodology does not employ a systematic approach to obtain a new PSF form that is both compact and accurate when conventional PSF forms are not satisfactory. Only the AED fitting quality (rather than its patterning-prediction quality) is considered during the conventional calibration methodology. It also lacks a process to consider whether the predicted deviation (as simulated using the chosen PSF form) is satisfactory. This paper proposes a new parametric PSF calibration methodology to systematically obtain a PSF form consisting of the smallest number of terms, with a better combination of basis functions and that optimizes pattern accuracy. The effectiveness of using the new methodology is demonstrated in terms of fitting accuracy, patterning-prediction accuracy, and patterning sensitivity. (C) 2012 Society of Photo-Optical Instrumentation Engineers (SPIE). [DOI: 10.1117/1.JMM.11.1.013009]
引用
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页数:12
相关论文
共 48 条
[1]  
[Anonymous], 1987, Encyclopedic dictionary of mathematics
[2]  
[Anonymous], 2009, EM RES MAT, P8
[3]   Energy dependence of proximity parameters investigated by fitting before measurement tests [J].
Aparshina, LI ;
Dubonos, SV ;
Maksimov, SV ;
Svintsov, AA ;
Zaitsev, SI .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1997, 15 (06) :2298-2302
[4]   Validity of double and triple Gaussian functions for proximity effect correction in X-ray mask writing [J].
Aya, S ;
Kise, K ;
Yabe, H ;
Marumoto, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (03) :1929-1936
[5]  
Chang S. M., 2008, P SOC PHOTO-OPT INS, V6921
[6]   PROXIMITY EFFECT IN ELECTRON-BEAM LITHOGRAPHY [J].
CHANG, THP .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (06) :1271-1275
[7]   PYRAMID - A hierarchical, rule-based approach toward proximity effect correction - Part II: Correction [J].
Cook, BD ;
Lee, SY .
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 1998, 11 (01) :117-128
[8]   0.1-MU SCALE LITHOGRAPHY USING A CONVENTIONAL ELECTRON-BEAM SYSTEM [J].
DIX, C ;
FLAVIN, PG ;
HENDY, P ;
JONES, ME .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (01) :131-135
[9]   CASINO V2.42 - A fast and easy-to-use modeling tool for scanning electron microscopy and microanalysis users [J].
Drouin, Dominique ;
Couture, Alexandre Real ;
Joly, Dany ;
Tastet, Xavier ;
Aimez, Vincent ;
Gauvin, Raynald .
SCANNING, 2007, 29 (03) :92-101
[10]  
EISENMANN H, 1994, P SOC PHOTO-OPT INS, V2194, P310, DOI 10.1117/12.175818