Floating-Body Effect in Partially/Dynamically/Fully Depleted DG/SOI MOSFETs Based on Unified Regional Modeling of Surface and Body Potentials

被引：7

作者：

Chiah, Siau Ben ^{[1
]}

Zhou, Xing ^{[1
]}

机构：

[1] Nanyang Technol Univ, Novitas, Sch Elect & Elect Engn, Nanoelect Ctr Excellence, Singapore 639798, Singapore

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2014年 / 61卷 / 02期

关键词：

Compact model (CM); double gate (DG); dynamically depleted (DD); floating body (FB); fully depleted (FD); impact ionization; MOSFET; partially depleted (PD); silicon-on-insulator (SOI); surface potential; unified regional modeling (URM); SUBSTRATE CURRENT MODEL; DEVICES;

D O I：

10.1109/TED.2013.2288309

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A compact terminal current/charge model for partially/dynamically/fully depleted (PD)/(DD)/(FD) double-gate (DG) and silicon-on-insulator (SOI) MOSFETs with floating-body (FB) effect based on unified regional modeling of the surface and body potentials is presented. The model accurately describes the physical behavior of the impact-ionization current that gives rise to the hump in the C-V characteristics and the body thickness- and doping-dependent kink effect. The FB potential at the zero-field location in the body is the key to model the electrical characteristics of PD/DD/FD devices with complete body doping and thickness scalability. The model is validated by comparison with I-V and C-V data of the numerical devices in a given range of body doping, body thickness, and temperature. Such a scalable model is important for physical and variability modeling of DG/SOI FinFETs with doped body.

引用

页码：333 / 341

页数：9

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