Structural, electronic, phonon and thermodynamic properties of hypothetical type-VIII clathrates Ba8Si46 and Ba8Al16Si30 investigated by first principles

被引:9
作者
Norouzzadeh, Payam [1 ]
Myles, Charles W. [2 ]
Vashaee, Daryoosh [1 ]
机构
[1] Oklahoma State Univ, Helmerich Adv Technol Res Ctr, Tulsa, OK 74106 USA
[2] Texas Tech Univ, Dept Phys, Lubbock, TX 79409 USA
基金
美国国家科学基金会;
关键词
Type-VIII clathrate; Ba8Si46; Ba8Al16Si30; Density functional theory; Lattice dynamics; 1ST-PRINCIPLES; SI; SUPERCONDUCTIVITY; GERMANIUM; SI-46; MODES; GE;
D O I
10.1016/j.jallcom.2013.10.190
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We present the results of first principles calculations of the structural, electronic, elastic, vibrational, and thermodynamic properties of the hypothetical silicon-based, guest containing type-VIII clathrates Ba8Si46 and Ba8Al16Si30. We obtained the lattice constant, formation energy, band structure, density of states, elastic constants, sound velocity, and Debye temperature using the density functional theory with generalized gradient approximation (GGA). We calculated phonon dispersion and vibrational density of states spectra using the density functional perturbation energy within GGA. We computed the temperature dependent specific heat, vibrational entropy, and vibrational Helmholtz free energy by utilizing quasi-harmonic approximation. We found that replacing some silicon atoms in the framework with aluminum atoms leads to the decrease of the fundamental band gap from 1.0 in Ba8Si46 to 0.18 eV in Ba8Al16Si30. Moreover, the guest Ba atoms produced localized phonon modes lying below 1.2, 1.8 THz for Ba8Si46, and Ba8Al16Si30, respectively, which lead to the reduction of the acoustic bandwidth of the host material. The effect of replacing Si atoms with Al on the properties of the interest is also discussed. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码:474 / 480
页数:7
相关论文
共 69 条
[1]  
Ashcroft N., 2011, Solid State Physics
[2]   GREEN-FUNCTION APPROACH TO LINEAR RESPONSE IN SOLIDS [J].
BARONI, S ;
GIANNOZZI, P ;
TESTA, A .
PHYSICAL REVIEW LETTERS, 1987, 58 (18) :1861-1864
[3]   Strong phonon charge carrier coupling in thermoelectric clathrates [J].
Bentien, A ;
Johnsen, S ;
Iversen, BB .
PHYSICAL REVIEW B, 2006, 73 (09)
[4]   Transport properties of composition tuned α- and β-Eu8Ga16-xGe30+x -: art. no. 165206 [J].
Bentien, A ;
Pacheco, V ;
Paschen, S ;
Grin, Y ;
Steglich, F .
PHYSICAL REVIEW B, 2005, 71 (16)
[5]   Electronic structure of the Na16Rb8Si136 and K16Rb8Si136 clathrates [J].
Biswas, Koushik ;
Myles, Charles W. .
PHYSICAL REVIEW B, 2006, 74 (11)
[6]   Electronic and vibrational properties of framework-substituted type-II silicon clathrates [J].
Biswas, Koushik ;
Myles, Charles W. .
PHYSICAL REVIEW B, 2007, 75 (24)
[7]   Structure and stability of the clathrates Ba8Ga16Ge30, Sr8Ga16Ge30, Ba8Ga16Si30, and Ba8In16Sn30 [J].
Blake, NP ;
Bryan, D ;
Latturner, S ;
Mollnitz, L ;
Stucky, GD ;
Metiu, H .
JOURNAL OF CHEMICAL PHYSICS, 2001, 114 (22) :10063-10074
[8]  
Broyden C.G., 1970, IMA J APPL MATH, V6, P76, DOI [10.1093/imamat/6.1.76, DOI 10.1093/IMAMAT/6.1.76]
[9]  
Carrillo-Cabrera W, 2002, Z KRIST-NEW CRYST ST, V217, P179
[10]   Glasslike heat conduction in high-mobility crystalline semiconductors [J].
Cohn, JL ;
Nolas, GS ;
Fessatidis, V ;
Metcalf, TH ;
Slack, GA .
PHYSICAL REVIEW LETTERS, 1999, 82 (04) :779-782