Great enhancements in the thermoelectric power factor of BiSbTe nanostructured films with well-ordered interfaces

被引:60
作者
Chang, Hsiu-Cheng [1 ]
Chen, Chun-Hua [1 ]
Kuo, Yung-Kang [2 ]
机构
[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30010, Taiwan
[2] Natl Dong Hwa Univ, Dept Phys, Hualien 97401, Taiwan
关键词
TEMPLATE-FREE SYNTHESIS; ELECTRICAL-CONDUCTIVITY; DEPOSITION CONDITIONS; THERMAL-CONDUCTIVITY; TRANSPORT-PROPERTIES; ANTISITE DEFECTS; TEMPERATURE; PERFORMANCE; BOUNDARIES; FIGURE;
D O I
10.1039/c3nr01499a
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
An innovative concept of twin-enhanced thermoelectricity was proposed to fundamentally resolve the high electrical resistance while not degrading the phonon scattering of the thermoelectric nanoassemblies. Under this frame, a variety of highly oriented and twinned bismuth antimony telluride (BixSb2-xTe3) nanocrystals were successfully fabricated by a large-area pulsed-laser deposition (PLD) technique on insulated silicon substrates at various deposition temperatures. The significant presence of the nonbasal- and basal-plane twins across the hexagonal BiSbTe nanocrystals, which were experimentally and systematically observed for the first time, evidently contributes to the unusually high electrical conductivity of similar to 2700 S cm(-1) and the power factor of similar to 25 mu W cm(-1) K-2 as well as the relatively low thermal conductivity of similar to 1.1 W m(-1) K-1 found in these nanostructured films.
引用
收藏
页码:7017 / 7025
页数:9
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