Enhancement of bias and illumination stability in thin-film transistors by doping InZnO with wide-band-gap Ta2O5

被引：49

作者：

Lan, Linfeng ^{[1
]}

Xiong, Nana ^{[1
]}

Xiao, Peng ^{[1
]}

Li, Min ^{[1
]}

Xu, Hua ^{[1
]}

Yao, Rihui ^{[1
]}

Wen, Shangsheng ^{[1
]}

Peng, Junbiao ^{[1
]}

机构：

[1] S China Univ Technol, State Key Lab Luminescent Mat & Devices, Guangzhou 510640, Guangdong, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 24期

基金：

中国国家自然科学基金;

关键词：

OXIDE;

D O I：

10.1063/1.4811416

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin-film transistor (TFT) with Ta2O5-doped InZnO (TIZO) channel layer was demonstrated. The TIZO-TFT exhibited smaller subthreshold swing and higher capability of carrier controlling when bearing nitrogen pre-annealing than the InZnO-TFT. Detailed studies showed that Ta had an effect of suppressing oxygen out-diffusing during thermal annealing, resulting in improving of the stability under positive gate bias stress. Furthermore, the TIZO-TFT displayed better stability under light illumination than InZnO-TFT, owing to its wider band gap and lower absorption after doped with wider-band-gap Ta2O5. (C) 2013 AIP Publishing LLC.

引用

页数：4

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