Soft x-ray photoemission studies of the HfO2/SiO2/Si system

被引：147

作者：

Sayan, S

Garfunkel, E

Suzer, S

机构：

[1] Rutgers State Univ, Dept Chem, Piscataway, NJ 08854 USA

[2] Bilkent Univ, Dept Chem, TR-06533 Bilkent, Turkey

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 12期

关键词：

D O I：

10.1063/1.1450049

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Soft x-ray photoelectron spectroscopy with synchrotron radiation was employed to study the valence-band offsets for the HfO2/SiO2/Si and HfO2/SiOxNy/Si systems. We obtained a valence-band offset difference of -1.05+/-0.1 eV between HfO2 (in HfO2/15 Angstrom SiO2/Si) and SiO2 (in 15 Angstrom SiO2/Si). There is no measurable difference between the HfO2 valence-band maximum positions of the HfO2/10 Angstrom SiOxNy/Si and HfO2/15 Angstrom SiO2/Si systems. (C) 2002 American Institute of Physics.

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页码：2135 / 2137

页数：3

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