Gate-Induced Superconductivity in Layered-Material-Based Electric Double Layer Transistors

被引：3

作者：

Ye, J. T. ^{[1
]}

Zhang, Y. J. ^{[1
]}

Matsuhashi, Y. ^{[1
]}

Craciun, M. F. ^{[2
]}

Russo, S. ^{[3
]}

Kasahara, Y. ^{[1
]}

Morpurgo, A. F. ^{[4
]}

Iwasa, Y. ^{[5
]}

机构：

[1] Univ Tokyo, Dept Appl Phys, Bunkyo Ku, 7-3-1 Hongo, Tokyo 1138656, Japan

[2] Univ Exeter, Sch Engn, Ctr Graphene, Exeter EX4 OF, Devon, England

[3] Univ Exeter, Sch Phys, Ctr Graphene Sci, Exeter EX4 OF, Devon, England

[4] Univ Geneva, DPMC & GAP, CH-CH1211 Geneva, Switzerland

[5] CERG, RIKEN, Wako, Saitama 3510198, Japan

来源：

26TH INTERNATIONAL CONFERENCE ON LOW TEMPERATURE PHYSICS (LT26), PTS 1-5 | 2012年 / 400卷

基金：

英国工程与自然科学研究理事会;

关键词：

INSULATOR-TRANSITION; HYDROGEN;

D O I：

10.1088/1742-6596/400/2/022139

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High carrier density part of many materials could be accessed by a variation of the field effect transistor technique: electric double layer transistor. Carrier density regime of n similar to 10(14) cm(-2) can be easily accessed electrostatically realizing effective doping without chemical modification. In this study, we utilized micro-cleavage on a number of interesting layered materials. And realized high carrier density state and high performance transport on atomically flat surfaces.

引用

页数：4

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