Chemical Vapor Deposition of Graphene on Copper Foils

被引：10

作者：

Rusakov, Pavel S. ^{[1
]}

Kondrashov, I. I. ^{[1
]}

Rybin, M. G. ^{[1
]}

Pozharov, A. S. ^{[1
]}

Obraztsova, E. D. ^{[1
]}

机构：

[1] AM Prokhorov Gen Phys Inst, Moscow 119991, Russia

来源：

JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS | 2013年 / 8卷 / 01期

关键词：

Graphene; CVD; FILMS;

D O I：

10.1166/jno.2013.1443

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The problem of graphene fabrication is still open. Nowadays one of the best methods of graphene synthesis is a chemical vapor deposition (CVD) on copper substrates. Here we present a study of a dependence of the quality and size of synthesized graphene monolayer on the synthesis process parameters. The time of synthesis was found to be one of the key parameters influenced to the number of defects, which was estimated on the base of D peak (1350 cm(-1)) height in Raman spectra. Another important parameters are the substrate maximum temperature and the period of maintaining the sample under this temperature.

引用

页码：79 / 82

页数：4

共 13 条

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Rybin, Maxim G.
Pozharov, Anatoliy S.
Obraztsova, Elena D.
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