Optical anisotropy of InGaAs quantum dots

被引：1

作者：

Blokhin, S. A. ^{[1
]}

Nadtochiy, A. M. ^{[1
]}

Krasivichev, A. A. ^{[1
]}

Karachinsky, L. Ya. ^{[1
]}

Vasil'ev, A. P. ^{[1
]}

Nevedomskiy, V. N. ^{[1
]}

Maximov, M. V. ^{[1
]}

Cirlin, G. E. ^{[1
]}

Buravlev, A. D. ^{[1
]}

Maleev, N. A. ^{[1
]}

Zhukov, A. E. ^{[2
]}

Ledentsov, N. N. ^{[1
]}

Ustinov, V. M. ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[2] St Petersburg Acad Univ, Russian Acad Sci, Nanotechnol Res & Educ Ctr, St Petersburg 194021, Russia

来源：

SEMICONDUCTORS | 2013年 / 47卷 / 01期

基金：

俄罗斯基础研究基金会;

关键词：

STRANSKI-KRASTANOW; SUBMONOLAYER;

D O I：

10.1134/S1063782613010077

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Polarization studies of InGaAs/GaAs quantum dots (QDs) synthesized in the submonolayer deposition mode (SMLQDs) on a singular GaAs (100) surface are carried out using photoluminescence spectroscopy. The influence of the effective In content in InGaAs SMLQDs and the effect of a wide-gap AlGaAs matrix on the optical anisotropy of the QDs are investigated. The highest degree (> 15%) of optical anisotropy between the [011] and [01] directions in the emission corresponding to the ground state of InGaAs/GaAs SMLQDs is observed for an effective In content of similar to 40%. The use of a wide-gap AlGaAs matrix resulted in an increase in the optical anisotropy of InGaAs SMLQDs by a factor of 1.5. It is found that vertical stacking of In(Ga)As/AlGaAs SMLQDs in the vertical-coupling mode (with spacer-layer thicknesses of 5-10 nm) leads to a further increase in the degree of optical anisotropy, which becomes as high as 25% on average. According to the data of transmission electron microscopy, the optical anisotropy of the ground-state photo-luminescence is predominantly caused by the anisotropy of the lateral dimensions of QDs in the [011] and [01] directions.

引用

页码：85 / 89

页数：5

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