Current-induced nanogap formation and graphitization in boron-doped diamond films

被引：3

作者：

Seshan, V. ^{[1
,2
]}

Arroyo, C. R. ^{[1
]}

Castellanos-Gomez, A. ^{[1
]}

Prins, F. ^{[1
]}

Perrin, M. L. ^{[1
]}

Janssens, S. D. ^{[1
,2
]}

Haenen, K. ^{[3
,4
]}

Nesladek, M. ^{[3
,4
]}

Sudhoelter, E. J. R. ^{[2
]}

de Smet, L. C. P. M. ^{[2
]}

van der Zant, H. S. J. ^{[1
]}

Dulic, D. ^{[1
]}

机构：

[1] Delft Univ Technol, Kavli Inst Nanosci, Lorentzweg 1, NL-2628 CJ Delft, Netherlands

[2] Delft Univ Technol, Dept Chem Engn, NL-2628 BL Delft, Netherlands

[3] Hasselt Univ, Inst Mat Res, BE-3590 Diepenbeek, Belgium

[4] IMEC VZW, IMOMEC, BE-3590 Diepenbeek, Belgium

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 19期

关键词：

annealing; boron; diamond; elemental semiconductors; energy gap; graphite; graphitisation; nanofabrication; nanostructured materials; Raman spectra; scanning electron microscopy;

D O I：

10.1063/1.4766346

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A high-current annealing technique is used to fabricate nanogaps and hybrid diamond/graphite structures in boron-doped nanocrystalline diamond films. Nanometer-sized gaps down to similar to 1 nm are produced using a feedback-controlled current annealing procedure. The nanogaps are characterized using scanning electron microscopy and electronic transport measurements. The structural changes produced by the elevated temperature, achieved by Joule heating during current annealing, are characterized using Raman spectroscopy. The formation of hybridized diamond/graphite structure is observed at the point of maximum heat accumulation. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4766346]

引用

页数：4

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