Hot-electron induced defect generation in AlGaN/GaN high electron mobility transistors

被引：16
|
作者：
Rao, Hemant [1 ]
Bosman, Gijs [1 ]
机构：
[1] Univ Florida, Dept Elect & Comp Engn, Gainesville, FL 32611 USA
来源：
SOLID-STATE ELECTRONICS | 2013年 / 79卷
关键词：
Hot-electrons; Device reliability; Defect generation; RELAXATION; ENERGY; GAN;
D O I：
10.1016/j.sse.2012.06.014
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Hot-carrier effects in gated AlGaN/GaN based high electron mobility transistors are studied by microwave noise temperature spectroscopy. Electron temperature profiles are measured and correlated to defect generation in the AlGaN/GaN channel interface. It is found that new defects are created at the AlGaN/GaN interface due to hot-electrons which are fairly well confined to the channel under the gated part. (C) 2012 Elsevier Ltd. All rights reserved.
引用
收藏
页码：11 / 13
页数：3
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