New analytic expressions for mutual inductance and resistance of coupled interconnects on lossy silicon substrate

被引：3
|
作者：
Ymeri, H [1 ]
Nauwelaers, B [1 ]
Maex, K [1 ]
Vandenberghe, S [1 ]
De Roest, D [1 ]
机构：
[1] Katholieke Univ Leuven, Div ESAT TELEMIC, Dept Elect Engn, ESAT, B-3001 Heverlee, Belgium
来源：
2001 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS | 2001年
关键词：
interconnects; silicon substrate; on-chip interconnects; skin effect; mutual impedance;
D O I：
10.1109/SMIC.2001.942364
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new analytic model for series mutual impedance of coupled interconnects on lossy silicon substrate is presenteded. The model includes the frequency-dependent distribution of the current on the silicon substrate (the substrate skin effect). From this model easy formulas for the accurate calculation of the frequency dependent distributed mutual inductance and the associated series mutual resistance of coupled interconnects on silicon substrate are derived. The validity of the proposed formulas has been checked by a comparison with the equivalent-circuit model data and corresponding full wave solutions. Through this work, it is found that the effect of the semiconducting substrate return path on the transmission behaviour of the interconnects must to be well modeled for the accurate prediction of the resistance and inductance over the whole frequency range.
引用
收藏
页码：192 / 200
页数：9
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