Characterization of metal contacts on and surfaces of cadmium zinc telluride

被引:35
作者
Burger, A [1 ]
Chen, H
Chattopadhyay, K
Shi, D
Morgan, SH
Collins, WE
James, RB
机构
[1] Ctr Photon Mat & Devices, Dept Phys, Nashville, TN 37208 USA
[2] Sandia Natl Labs, Adv Mat Proc Dept, Livermore, CA 94551 USA
基金
美国国家科学基金会; 美国国家航空航天局;
关键词
cadmium zinc telluride; electrical contacts; surface passivation; photoconductivity; surface recombination;
D O I
10.1016/S0168-9002(98)01574-5
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
In the past several years significant progress has been made in building a database of physical properties for detector quality CdxZn1-xTe (CZT) (x = 0.1-0.2) crystal material. CZT's high efficiency combined with its room temperature operation make the material an excellent choice for imaging and spectroscopy in the 10-200 keV energy range. For detector grade material, superior crystallinity and high bulk resistivity are required. The surface preparation during the detector fabrication plays a vital role in determining the contact characteristics and the surface leakage current, which are often the dominant factors influencing its performance. This paper presents a surface and contact characterization study aimed at establishing the effects of the surface preparation steps prior to contacting (polishing and chemical etching), the choice of the metal and contact deposition technique; and the surface oxidation process. A photoconductivity mapping technique is used for studying the effects of different surface treatments on the surface recombination. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:8 / 13
页数:6
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