Effect of the oxygen isoelectronic substitution in Cu2ZnSnS4 and its photovoltaic application

被引：23

作者：

Tablero, C. ^{[1
]}

机构：

[1] Univ Politecn Madrid, ETSI Telecomunicac, Inst Energia Solar, E-28040 Madrid, Spain

来源：

THIN SOLID FILMS | 2012年 / 520卷 / 15期

关键词：

Electronic structure; Semiconductors; Impurities; Photovoltaics; FILM SOLAR-CELLS; THIN-FILMS; PHOTOLUMINESCENCE; EFFICIENCY; MODEL;

D O I：

10.1016/j.tsf.2012.03.020

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The optoelectronic properties of Cu2ZnSnS4 and environmental considerations have attracted significant interest for photovoltaics. Using first-principles, we analyze the possible improvement of this material as a photovoltaic absorber via the isoelectronic substitution of S with O atoms. The evolution of the acceptor level is analyzed with respect to the atomic position of the nearest neighbors of the O atom. We estimate the maximum efficiency of this compound when used as a light absorber. The presence of the sub-band gap level below the conduction band could increases the solar-energy conversion with respect to the host. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：5011 / 5013

页数：3

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