Inhibitive Influence of Oxygen Vacancies for Photoactivity on TiO2(110)

被引:46
作者
Wang, Zhi-Tao [1 ,2 ]
Deskins, N. Aaron [3 ]
Henderson, Michael A. [2 ,4 ]
Lyubinetsky, Igor [1 ,2 ]
机构
[1] Inst Integrated Catalysis, EMSL, Richland, WA 99352 USA
[2] Pacific NW Natl Lab, Richland, WA 99352 USA
[3] Worcester Polytech Inst, Dept Chem Engn, Worcester, MA 01609 USA
[4] Inst Integrated Catalysis, Fundamental & Computat Sci Directorate, Richland, WA 99352 USA
关键词
RUTILE TIO2(110); SURFACE SCIENCE; TIO2; O-2; ADSORPTION; ACID; PHOTOLYSIS; CHEMISTRY; STATES;
D O I
10.1103/PhysRevLett.109.266103
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Scanning tunneling microscopy results reveal a pronounced site selectivity in the hole-mediated photooxidation of trimethyl acetate (TMA) on TiO2(110), wherein the reaction readily occurs at regular Ti sites but is completely inhibited at oxygen vacancy (V-O) defects. Utilizing electron energy loss spectroscopy and density functional theory, we show that the lack of reactivity of TMA groups adsorbed at V-O's cannot be attributed to either a less active adsorption conformation or electron transfer from the V-O defect. Instead, we propose that the excess unpaired electrons associated with the V-O promptly recombine with photoexcited holes approaching the surface, effectively "screening" TMA species at the V-O site. We also show that this screening effect is predominately localized at the V-O, only mildly affecting TMA's at adjacent Ti sites. DOI: 10.1103/PhysRevLett.109.266103
引用
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页数:5
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