Suppression of Higher-Order Lateral Modes in Broad-Area Diode Lasers by Resonant Anti-Guiding

被引:27
作者
Wenzel, Hans [1 ]
Crump, Paul [1 ]
Fricke, Joerg [1 ]
Ressel, Peter [1 ]
Erbert, Goetz [1 ]
机构
[1] Leibniz Inst Hochstfrequenztech, Ferdinand Braun Inst, D-12489 Berlin, Germany
关键词
Laser modes; semiconductor lasers; simulation; OPTICAL-PROPERTIES; POWER; IMPROVEMENT;
D O I
10.1109/JQE.2013.2288002
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
For a maximum fiber-coupled power, high power broad-area diode lasers must operate with a small lateral far-field divergence at high continuous wave (CW) powers. However, these structures are laterally multi-moded, with a low beam quality and wide emission angles. We present a new approach to suppress higher-order lateral modes based on an anti-guiding layer with a high refractive index inserted at the edges of the active stripe. Simulations of planar waveguides containing germanium layers reveal that strong mode-coupling effects occur. These are found to vary as a function of the thickness of the inserted layer. By embedding the germanium layer in the outer region of a ridge-waveguide, the mode coupling effects result in a reduction of the modal gain of higher-order lateral modes. The lateral far-field divergence of fabricated 90-mu m stripe lasers emitting at 980 nm and containing such an anti-guiding layer is narrowed by 3 degrees at a CW output power of 10 W.
引用
收藏
页码:1102 / 1108
页数:7
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