Influence of tetramethylammonium hydroxide treatment on the electrical characteristics of Ni/Au/GaN Schottky barrier diode

被引：11
作者：
Reddy, M. Siva Pratap [1 ]
Son, Dong-Hyeok [2 ]
Lee, Jung-Hee [2 ]
Jang, Ja-Soon [1 ]
Reddy, V. Rajagopal [3 ]
机构：
[1] Yeungnam Univ, Dept Elect Engn, LEDIT Fus Technol Res Ctr LIFTRC, Gyongsan 712749, South Korea
[2] Kyungpook Natl Univ, Sch Elect Engn & Comp Sci, Taegu 702701, South Korea
[3] Sri Venkateswara Univ, Dept Phys, Tirupati, Andhra Pradesh, India
来源：
MATERIALS CHEMISTRY AND PHYSICS | 2014年 / 143卷 / 02期
基金：
新加坡国家研究基金会;
关键词：
Inorganic compounds; Nitrides; Optical materials; Surface properties; Etching; Electrical properties; CHEMICAL-VAPOR-DEPOSITION; FIELD-EFFECT TRANSISTORS; N-TYPE GAN; METAL-SEMICONDUCTOR; SEMIINSULATING GAN; SERIES RESISTANCE; INTERFACE STATES; SIN PASSIVATION; SILICON; SURFACE;
D O I：
10.1016/j.matchemphys.2013.10.016
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The effect of tetramethylammonium hydroxide (TMAH) treatment on the electrical properties of Ni/Au/GaN Schottky diodes have been investigated by current-voltage (I-V) and capacitance-voltage (C-V) techniques. The barrier heights and ideality factors measured from I-V characteristics are found to be 0.70 eV and 132 for without TMAH treatment, and 0.78 eV and 1.14 for with TMAH treatment, respectively. Cheung method is used to measure the series resistance and barrier height of the Schottky diodes, and the barrier height consistency is checked using the Norde method. The magnitude of interface state density for the diodes without and with TMAH treatment are varied from 7.45 x 1013 eV(-1) cm(-2) to 6.09 x 10(12) eV(-1) cm(-2) and 4.03 x 10(13) eV(-1) cm(-2) to 1.79 x 10(12) eV(-1) cm(-2) in the below the conduction band from E-C-0.19 eV to E-C-0.63 eV and E-C-0.22 eV to E-C-0.73 eV. Based on the results, the TMAH treatment effectively removes of surface oxide (GaxOy) layer, formed due to the incorporation of the residual oxygen with Ga atom at the GaN surface during the plasma etching. The decrease in interface state density at the Ni/Au/GaN interface could be the reason for the improvement in the electrical properties. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码：801 / 805
页数：5
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