Thermodynamic properties of 3C-SiC

被引：14

作者：

Thakore, B. Y. ^{[1
]}

Khambholja, S. G. ^{[2
]}

Vahora, A. Y. ^{[1
]}

Bhatt, N. K. ^{[1
]}

Jani, A. R. ^{[1
]}

机构：

[1] Sardar Patel Univ, Dept Phys, Vallabh Vidyanagar 388120, Gujarat, India

[2] Indus Univ, Ahmadabad 380001, Gujarat, India

来源：

CHINESE PHYSICS B | 2013年 / 22卷 / 10期

关键词：

phase transition; phonon dispersion curve; Debye model; thermodynamic property; INDUCED PHASE-TRANSITION; AB-INITIO CALCULATION; THERMAL-EXPANSION; PHONON-DISPERSION; SILICON-CARBIDE; SIC POLYTYPES; SIMULATION; DYNAMICS; CURVES;

D O I：

10.1088/1674-1056/22/10/106401

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

In the present paper, we report on the results of various thermodynamic properties of 3C-SiC at high pressure and temperature using first principles calculations. We use the plane-wave pseudopotential density functional theory as implemented in Quantum ESPRESSO code for calculating various cohesive properties in ambient condition. Further, ionic motion at a finite temperature is taken into account using the quasiharmonic Debye model. The calculated thermodynamic properties, phonon dispersion curves, and phonon densities of states at different temperatures and structural phase transitions at high pressures are found to be in good agreement with experimental and other theoretical results.

引用

页数：7

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