Formation and laser-induced-fluorescence study of SiO+ ions produced by laser ablation of Si in oxygen gas

被引：29

作者：

Matsuo, Y

Nakajima, T

Kobayashi, T

Takami, M

机构：

[1] Inst. of Phys. and Chemical Research, Wako, Saitama, 351-01

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 08期

关键词：

D O I：

10.1063/1.119750

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied laser-induced-fluorescence (LIF) spectra of SiO+ produced by laser ablation of a Si wafer in oxygen ambient gas. Emission from neutral and ionic species of Si atoms and SiO molecules is also studied in the laser-induced plasma plume. The optimum oxygen pressure for the formation of molecular ions is found to be similar to 120 mTorr. The rotational temperature of SiO+ ions shows rapid thermalization toward room temperature within 20 mu s. (C) 1997 American Institute of Physics.

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页码：996 / 998

页数：3

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