Packing fraction, bond valence and crystal structure of AVO4(A = Eu, Y) microwave dielectric ceramics with low permittivity

被引:12
作者
Chen, Jinwu [1 ,2 ,3 ]
Fang, Liang [1 ,2 ,4 ]
Li, Jie [1 ,2 ]
Tang, Ying [1 ,2 ]
Cheng, Kai [4 ]
Cao, Yijie [3 ]
机构
[1] Guilin Univ Technol, Minist Educ, Key Lab Nonferrous Mat & New Proc Technol, Guilin 541004, Peoples R China
[2] Guilin Univ Technol, Coll Mat Sci & Engn, Key Lab Inorgan Nonmetall Crystalline & Energy Co, Guilin 541004, Peoples R China
[3] Guilin Univ Aerosp Technol, Sch Mech Engn, Guilin 541004, Peoples R China
[4] China Three Gorges Univ, Coll Mat & Chem Engn, Yichang 443002, Peoples R China
关键词
OXIDES; CE;
D O I
10.1007/s10854-020-04454-9
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The A(3+)B(5+)O(4)binary oxides have a variety of different structures-monoclinic, and tetragonal-making them suitable candidates for laser hosts, energy storage, microwave dielectric substrates, etc. In this work, we prepared two tetragonal AVO(4)(A = Eu, Y) ceramics with zircon structure. The powder X-ray diffraction (XRD) has been used to study phase purity of the zircon-type AVO(4)(A = Eu, Y) ceramics. There was a significant correlation between microwave dielectric properties and relative density. Dense EuVO(4)and YVO(4)ceramics sintered at 1180 degrees C and 1240 degrees C exhibited promising microwave dielectric properties with epsilon(r) = 11.6 and 9.9,Q x f = 46,862 GHz and 56,174 GHz,tau(f) = - 49.6 ppm/degrees C and - 43.7 ppm/degrees C, respectively. In addition, the relationship between microwave dielectric properties and crystal structure of AVO(4)(A = Eu, Y) ceramics were discussed by packing fraction and bond valence theory in detail.
引用
收藏
页码:19180 / 19187
页数:8
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