Nitrogen-doped graphene hollow nanospheres as novel electrode materials for supercapacitor applications

被引:155
|
作者
Fan, Wei [1 ]
Xia, Yong-Yao [2 ,3 ]
Tjiu, Weng Weei [4 ]
Pallathadka, Pramoda Kumari [4 ,5 ]
He, Chaobin [4 ,5 ]
Liu, Tianxi [1 ]
机构
[1] Fudan Univ, State Key Lab Mol Engn Polymers, Dept Macromol Sci, Shanghai 200433, Peoples R China
[2] Fudan Univ, Dept Chem, Shanghai 200433, Peoples R China
[3] Fudan Univ, Shanghai Key Lab Mol Catalysis & Innovat Mat, Inst New Energy, Shanghai 200433, Peoples R China
[4] ASTAR, Inst Mat Res & Engn, Singapore 117602, Singapore
[5] Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 117576, Singapore
基金
中国国家自然科学基金;
关键词
Nitrogen-doping; Graphene; Hollow nanostructure; Supercapacitor; METAL-FREE ELECTROCATALYST; OXYGEN-REDUCTION; OXIDE; POLYANILINE; PERFORMANCE; CATALYST; FILMS; NANOSHEETS; COMPOSITE; LEVEL;
D O I
10.1016/j.jpowsour.2013.05.184
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Nitrogen-doped graphene hollow spheres (NGHS) have been prepared by a simple layer-by-layer assembly of graphene oxide (GO) and polyaniline (PANI) on polystyrene (PS) nanospheres, followed by calcination to remove the PS template and realize the carbonization of PANI. The resultant NGHS has a high nitrogen content of 8.7 atom%, in which various nitrogen species, such as pyridinic-N, pyrrolic-N, and quaternary-N, are detected. The hollow nanostructure of NGHS can provide high electroactive regions, while the effective nitrogen-doping of graphene can increase electron mobility and space charge capacitance. The specific capacitance of NGHS with four bilayers (NGHS-4bi) can reach 381 F g(-1) at a current density of 1 A g(-1). The greatly enhanced electrochemical performance can be ascribed to the synergistic effect of the hollow nanostructure and nitrogen-doping, suggesting that NGHS as novel electrode materials may have potential applications in high performance energy storage devices. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码:973 / 981
页数:9
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