Growth of Ca3Ta(Ga0.5Al0.5)3Si2O14 piezoelectric single crystal and the piezoelectric properties
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作者:
Kudo, Tetsuo
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Tohoku Univ, Inst Mat Res, Sendai, Miyagi, JapanTohoku Univ, Inst Mat Res, Sendai, Miyagi, Japan
Kudo, Tetsuo
[1
]
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机构:
Shoji, Yasuhiro
[1
]
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Ohashi, Yuji
[1
]
Medvedev, Andrey
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机构:
Tohoku Univ, Inst Mat Res, Sendai, Miyagi, JapanTohoku Univ, Inst Mat Res, Sendai, Miyagi, Japan
Medvedev, Andrey
[1
]
Kurosawa, Shunsuke
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Tohoku Univ, Inst Mat Res, Sendai, Miyagi, JapanTohoku Univ, Inst Mat Res, Sendai, Miyagi, Japan
Kurosawa, Shunsuke
[1
]
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Yoshikawa, Akira
[1
]
Yokota, Yuui
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Tohoku Univ, NICHe, Sendai, Miyagi 980, JapanTohoku Univ, Inst Mat Res, Sendai, Miyagi, Japan
Yokota, Yuui
[2
]
Kamada, Kei
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机构:
Tohoku Univ, NICHe, Sendai, Miyagi 980, JapanTohoku Univ, Inst Mat Res, Sendai, Miyagi, Japan
Kamada, Kei
[2
]
机构:
[1] Tohoku Univ, Inst Mat Res, Sendai, Miyagi, Japan
[2] Tohoku Univ, NICHe, Sendai, Miyagi 980, Japan
来源:
2014 JOINT IEEE INTERNATIONAL SYMPOSIUM ON THE APPLICATIONS OF FERROELECTRICS, INTERNATIONAL WORKSHOP ON ACOUSTIC TRANSDUCTION MATERIALS AND DEVICES & WORKSHOP ON PIEZORESPONSE FORCE MICROSCOPY (ISAF/IWATMD/PFM)
|
2014年
关键词:
Single Crystal;
Langasite;
Crystal Growth;
Piezoelectric Material;
ELASTIC PROPERTIES;
D O I:
暂无
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
We grew Ca3Ta(Ga0.5Al0.5)(3)Si2O14 piezoelectric single crystal with a diameter of 1 inch by Czochralski method and the physical properties were investigated. The grown crystal indicated high transparency with the yellow color. In addition, there was no crack in the crystal. By the powder X-ray diffraction measurement, the grown crystal was a single phase of langasite-type structure and lattice parameters, a- and c-axes lengths, were decreased by the Al substitution. The back-reflection Laue image revealed that the grown crystal was single crystal and crystalline facets derived from (0 0 1) plane. Actual chemical composition of grown crystal was little different from the nominal composition with stoichiometric composition.