Infrared-sensitive electrochromic device based on VO2

被引：70

作者：

Nakano, M. ^{[1
,2
]}

Shibuya, K. ^{[3
]}

Ogawa, N. ^{[1
]}

Hatano, T. ^{[1
]}

Kawasaki, M. ^{[1
,4
,5
]}

Iwasa, Y. ^{[1
,4
,5
]}

Tokura, Y. ^{[1
,4
,5
]}

机构：

[1] RIKEN, CEMS, Wako, Saitama 3510198, Japan

[2] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

[3] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058562, Japan

[4] Univ Tokyo, Quantum Phase Elect Ctr, Tokyo 1138656, Japan

[5] Univ Tokyo, Dept Appl Phys, Tokyo 1138656, Japan

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 15期

基金：

日本学术振兴会; 日本科学技术振兴机构;

关键词：

METAL-INSULATOR-TRANSITION; ELECTRIC-FIELD; THIN-FILMS; TUNGSTEN-OXIDE;

D O I：

10.1063/1.4824621

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The field-effect transistor (FET) provides an electrical switching function of current flowing through a channel surface by external voltage. Here, we report on a field-effect device that enables electrical switching of optical transmittance as well as conventional electrical current. We investigated optical properties of vanadium dioxide (VO2) thin film under the presence of electric field generated at the interface between VO2 and ionic liquid in a FET geometry, and found that the device exhibits clear electrochromic effect with large ON/OFF contrast only in the infrared region, potentially beneficial for energy-saving smart window applications as a voltage-tunable transparent heat-cutting filter. (C) 2013 AIP Publishing LLC.

引用

页数：4

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