In situ annealing effect on the structural properties of near-surface GaInNAs/GaAs quantum wells

被引：8

作者：

Liu, HF ^{[1
]}

Karrinne, S ^{[1
]}

Peng, CS ^{[1
]}

Jouhti, T ^{[1
]}

Konttinen, J ^{[1
]}

Pessa, M ^{[1
]}

机构：

[1] Tampere Univ Technol, Optoelect Res Ctr, FIN-33101 Tampere, Finland

来源：

JOURNAL OF CRYSTAL GROWTH | 2004年 / 263卷 / 1-4期

基金：

芬兰科学院;

关键词：

X-ray diffraction; molecular beam epitaxy; semiconducting III-V materials;

D O I：

10.1016/j.jcrysgro.2003.12.006

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Near-surface Ga1-xInxNyAs1-y/GaAs quantum well (QW) structures were grown and in situ annealed in a solid-source molecular beam epitaxy chamber equipped with a radio-frequency nitrogen (N-2) plasma source. It was found that the surface desorption and indium out-diffusion from the surface QW took place under annealing condition by atomic force microscope and X-ray photoelectron spectroscope. Ga/In atoms interdiffusion across the QW hetero-junctions and the change of composition fluctuation within the QW have been observed at elevated annealing temperatures by using double crystal X-ray diffraction (XRD) theta/2theta scans and transmission electron microscopy. The best fitting for the XRD results reveals a diffusion length of delta = 0.7 nm and 1.0 nm for 580degreesC and 680degreesC in situ annealing, respectively. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：171 / 175

页数：5

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