In situ annealing effect on the structural properties of near-surface GaInNAs/GaAs quantum wells

被引：8
|
作者：
Liu, HF [1 ]
Karrinne, S [1 ]
Peng, CS [1 ]
Jouhti, T [1 ]
Konttinen, J [1 ]
Pessa, M [1 ]
机构：
[1] Tampere Univ Technol, Optoelect Res Ctr, FIN-33101 Tampere, Finland
来源：
JOURNAL OF CRYSTAL GROWTH | 2004年 / 263卷 / 1-4期
基金：
芬兰科学院;
关键词：
X-ray diffraction; molecular beam epitaxy; semiconducting III-V materials;
D O I：
10.1016/j.jcrysgro.2003.12.006
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Near-surface Ga1-xInxNyAs1-y/GaAs quantum well (QW) structures were grown and in situ annealed in a solid-source molecular beam epitaxy chamber equipped with a radio-frequency nitrogen (N-2) plasma source. It was found that the surface desorption and indium out-diffusion from the surface QW took place under annealing condition by atomic force microscope and X-ray photoelectron spectroscope. Ga/In atoms interdiffusion across the QW hetero-junctions and the change of composition fluctuation within the QW have been observed at elevated annealing temperatures by using double crystal X-ray diffraction (XRD) theta/2theta scans and transmission electron microscopy. The best fitting for the XRD results reveals a diffusion length of delta = 0.7 nm and 1.0 nm for 580degreesC and 680degreesC in situ annealing, respectively. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：171 / 175
页数：5
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