5 GHz laterally-excited bulk-wave resonators (XBARs) based on thin platelets of lithium niobate

被引:151
作者
Plessky, V. [1 ,2 ]
Yandrapalli, S. [1 ,2 ,5 ]
Turner, P. J. [3 ]
Villanueva, L. G. [4 ]
Koskela, J. [1 ,2 ]
Hammond, R. B. [3 ]
机构
[1] Resonant Inc, Gorgier, Switzerland
[2] GVR Trade SA, Gorgier, Switzerland
[3] Resonant Inc, Santa Barbara, CA USA
[4] Ecole Polytech Fed Lausanne, ANEMS Lab, Lausanne, Switzerland
[5] Ecole Polytech Fed Lausanne, Lausanne, Switzerland
关键词
photolithography; crystal resonators; acoustic resonators; lithium compounds; electrodes; bulk acoustic wave devices; Q-factor; micromechanical devices; microwave resonators; microwave filters; lithium niobate; narrow electrodes; shear-wave bulk acoustic resonances; lateral electric fields; resonance frequency; quality-factors; XBAR; laterally-excited bulk-wave resonators; free-standing platelet; crystalline Y-axis; resonance Q-factor; piezoelectric coupling; resonance-antiresonance frequency spacing; low-loss filters; wide band filters; RF filters; 4th generation mobile phones; 5th generation mobile phones; optical photolithography; MEMS process; high frequency filter; frequency; 5; 0; GHz; size; 500; nm; 3; 0 GHz to 6; 400; LiNbO3;
D O I
10.1049/el.2018.7297
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In a free-standing 400-nm-thick platelet of crystalline ZY-LiNbO3, narrow electrodes (500 nm) placed periodically with a pitch of a few microns can eXcite standing shear-wave bulk acoustic resonances (XBARs), by utilising lateral electric fields oriented parallel to the crystalline Y-axis and parallel to the plane of the platelet. The resonance frequency of similar to 4800 MHz is determined mainly by the platelet thickness and only weakly depends on the electrode width and the pitch. Simulations show quality-factors (Q) at resonance and anti-resonance higher than 1000. Measurements of the first fabricated devices show a resonance Q-factor similar to 300, strong piezoelectric coupling similar to 25%, (indicated by the large Resonance-antiResonance frequency spacing, similar to 11%) and an impedance at resonance of a few ohms. The static capacitance of the devices, corresponds to the imaginary part of the impedance similar to 100 omega. This device opens the possibility for the development of low-loss, wide band, RF filters in the 3-6 GHz range for 4th and 5th generation (4G/5G) mobile phones. XBARs can be produced using standard optical photolithography and MEMS processes. The 3rd, 5th, 7th, and 9th harmonics were observed, up to 38 GHz, and are also promising for high frequency filter design.
引用
收藏
页码:98 / +
页数:2
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