Structural characterization of amorphous carbon nitride thin films prepared by pulsed laser deposition

被引：1

作者：

Aoi, Y ^{[1
]}

Sakurada, K ^{[1
]}

Ono, K ^{[1
]}

Kamijo, E ^{[1
]}

机构：

[1] Ryukoku Univ, Fac Sci & Technol, Otsu, Shiga 5202194, Japan

来源：

EURO CERAMICS VII, PT 1-3 | 2002年 / 206-2卷

关键词：

carbon nitride; thin film; structural characterization; pulsed laser deposition;

D O I：

10.4028/www.scientific.net/KEM.206-213.531

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Amorphous carbon nitride thin films were deposited by pulsed laser deposition in nitrogen atmosphere and under nitrogen radical beam irradiation. The deposited films were characterized by scanning electron microscope, x-ray photoelectron spectroscopy (XPS), Raman scattering and Fourier transform infrared spectroscopy (FTIR). The maximum N/C ratio of the deposited film was 0.24 in this experimental. Structural characterization by XPS indicated that the nitrogen atoms in the film were mainly bonded in N-sp(3)C and N-sp(2)C configurations. The ratio of N-sp(3)C slightly increased and the ratio of N-sp(2)C decreased with increasing NIC atomic ratio of the deposited film. FTIR and Raman spectra indicated that N-spC are small as compared with N-sp(3)C and N-sp(2)C.

引用

页码：531 / 534

页数：4

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