Optical Properties and Crystallinity of ZnO Thin Films Grown on Porous Silicon by Using Plasma-assisted Molecular Beam Epitaxy

被引：2

作者：

Kim, Min Su ^{[1
]}

Leem, Jae-Young ^{[1
]}

Kim, Do Yeob ^{[2
]}

Kim, Sung-O ^{[2
]}

机构：

[1] Inje Univ, Ctr Nano Mfg, Dept Nano Syst Engn, Gimhae 621749, South Korea

[2] Clemson Univ, Holcombe Dept Elect & Comp Engn, Ctr Opt Mat Sci & Engn Technol, Clemson, SC 29634 USA

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2012年 / 60卷 / 11期

基金：

新加坡国家研究基金会;

关键词：

Zinc oxide; Porous silicon; Molecular beam epitaxy; Photoluminescence; ROOM-TEMPERATURE PHOTOLUMINESCENCE; BUFFER LAYER; QUALITY; IMPROVEMENT; DEPENDENCE; SUBSTRATE; THICKNESS;

D O I：

10.3938/jkps.60.1949

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Zinc oxide (ZnO) thin films were grown on porous silicon (PS) at different growth temperature by using plasma-assisted molecular beam epitaxy (PA-MBE). From photoluminescence (PL), the asymmetric-shaped near-band-edge emission (NBE) peaks comprised of a free exciton (FX) and a longitudinal-optical phonon replica of the FX (FX-1LO) were observed from the ZnO thin films at room temperature (RT). The intensity ratio of the FX and the FX-1LO peaks decreased with increasing the temperature. The Huang-Rhys factor S of the ZnO thin films increased linearly from 0.576 to 1.519 with increasing the temperature, resulting from a decrease in the probability of exciton-phonon scattering. The crystal quality of the ZnO thin films was degraded with increasing the temperature. Nonetheless, the degradation of the crystal quality for the ZnO thin films grown on PS was much smaller than that of the ZnO thin films grown on Si substrates at higher temperatures.

引用

页码：1949 / 1952

页数：4

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