Controlling Characteristics of 4H-SiC(0001) p-Channel MOSFETs Fabricated on Ion-Implanted n-Well

被引：6

作者：

Okamoto, Mitsuo ^{[1
]}

Iijima, Miwako ^{[1
]}

Nagano, Takahiro ^{[1
]}

Fukuda, Kenji ^{[1
]}

Okumura, Hajime ^{[1
]}

机构：

[1] Adv Power Elect Res Ctr, Tsukuba, Ibaraki 3058568, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2 | 2012年 / 717-720卷

关键词：

4H-SiC; p-channel; MOSFET; buried channel; n-well; CMOS; threshold voltage; retrograde; channel mobility; ion-implantation;

D O I：

10.4028/www.scientific.net/MSF.717-720.781

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Fabricated were 4H-SiC p-channel MOSFETs in two types of ion-implanted n-well regions and in the n-type substrate as a control. Effects of the n-well structure on the electrical properties were investigated. P-channel MOSFETs fabricated in the uniform doped n-well by using multiple ion-implantations showed inferior on-state characteristics to that of the control MOSFET, while those fabricated in the retrograde n-wells by using single-shot ion-implantation without additional implantation to form the surface p-type region indicated improved channel properties. The V-th values were controlled by the impurity concentration and depth of the surface p-type region, and the values of channel mobility were nearly equal to that of the control MOSFET. Good sub-threshold characteristics for the type II devices were demonstrated.

引用

页码：781 / 784

页数：4

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