Enhanced dopant activation and elimination of end-of-range defects in BF2+-implanted silicon-on-insulator by high-density current

被引：6

作者：

Lin, HH ^{[1
]}

Cheng, SL

Chen, LJ

Chen, C

Tu, KN

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu, Taiwan

[2] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu, Taiwan

[3] Univ Calif Los Angeles, Dept Mat Sci & Engn, Los Angeles, CA 90095 USA

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 24期

关键词：

D O I：

10.1063/1.1423773

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Enhanced dopant activation and elimination of end-of-range (EOR) defects in BF2+-implanted silicon-on-insulator (SOI) have been achieved by high-density current stressing. With the high-density current stressing, the implantation amorphous silicon underwent recrystallization, enhanced dopant activation and elimination of the (EOR) defects. The current stressing method allows the complete removal of EOR defects that has not been possible with conventional thermal annealing in the processing of high-performance SOI devices. (C) 2001 American Institute of Physics.

引用

页码：3971 / 3973

页数：3

共 6 条

[1] Evolution of end-of-range defects in silicon-on-insulator substrates
Fazzini, P. F.
Cristiano, F.
Dupre, C.
Paul, S.
Ernst, T.
Kheyrandish, H.
Bourdelle, K. K.
Lerch, W.
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2008, 154 (256-259): : 256 - 259
[2] Dopant activation of heavily doped silicon-on-insulator by high density currents
Chen, C
Huang, JS
Liao, CN
Tu, KN
JOURNAL OF APPLIED PHYSICS, 1999, 86 (03) : 1552 - 1557
[3] REMOVAL OF END-OF-RANGE DEFECTS IN BF2+ IMPLANTED (111)SI BY THE GRAIN-GROWTH OF THIN NISI2 OVERLAYER
CHEN, WJ
CHEN, LJ
JOURNAL OF APPLIED PHYSICS, 1991, 69 (10) : 7322 - 7324
[4] EFFECT OF DOSE AND ANNEALING CONDITIONS ON THE STRUCTURE OF SILICON-ON-INSULATOR MATERIAL IMPLANTED WITH OXYGEN AT HIGH-TEMPERATURE AND AT HIGH-CURRENT DENSITY
VISITSERNGTRAKUL, S
KRAUSE, SJ
CORDTS, BF
ROITMAN, P
VACUUM, 1991, 42 (5-6) : 353 - 358
[5] Diffusion and activation of ultrashallow B implants in silicon on insulator:: End-of-range defect dissolution and the buried Si/SiO2 interface
Hamilton, J. J.
Cowern, N. E. B.
Sharp, J. A.
Kirkby, K. J.
Collart, E. J. H.
Colombeau, B.
Bersani, M.
Giubertoni, D.
Parisini, A.
APPLIED PHYSICS LETTERS, 2006, 89 (04)
[6] THE ANNEALING TIME AND TEMPERATURE-DEPENDENCE OF ELECTRICAL DOPANT ACTIVATION IN HIGH-DOSE BF2 ION-IMPLANTED SILICON
KATO, J
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1994, 141 (11) : 3158 - 3161

← 1 →