Single electron transport through site-controlled InAs quantum dots

被引：5

作者：

Cha, K. M. ^{[1
]}

Shibata, K. ^{[1
]}

Hirakawa, K. ^{[1
,2
,3
]}

机构：

[1] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan

[2] Univ Tokyo, Inst Nano Quantum Informat Elect, Meguro Ku, Tokyo 1538505, Japan

[3] CREST JST, Kawaguchi, Saitama 3320012, Japan

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 22期

基金：

日本科学技术振兴机构; 日本学术振兴会;

关键词：

BEAM LITHOGRAPHY; EMISSION; SYSTEM; ISLAND;

D O I：

10.1063/1.4769039

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have grown site-and size-controlled InAs quantum dots (QDs) in shallow nanoholes prepared using atomic force microscope-assisted anodic nano-oxidation and subsequent etching, and investigated their transport properties by depositing metal nanogap electrodes on a single QD. We have observed clear diamond-like patterns in Coulomb stability diagrams, indicating that the fabricated single QD transistors operate as single electron transistors and that the site-controlled QDs have a good crystalline quality. Furthermore, we show that the charging energies and the orbital quantization energies can be controlled over a wide range by controlling the size of the QDs. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4769039]

引用

页数：5

共 26 条

[1] Site-control of InAs quantum dots using ex-situ electron-beam lithographic patterning of GaAs substrates [J].

Atkinson, P ;

Ward, MB ;

Bremner, SP ;

Anderson, D ;

Farrow, T ;

Jones, GAC ;

Shields, AJ ;

Ritchie, DA .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (4A) :2519-2521

[2] Site-controlled growth and luminescence of InAs quantum dots using in situ Ga-assisted deoxidation of patterned substrates [J].

Atkinson, P. ;

Kiravittaya, S. ;

Benyoucef, M. ;

Rastelli, A. ;

Schmidt, O. G. .

APPLIED PHYSICS LETTERS, 2008, 93 (10)

[3] High performance single photon sources from photolithographically defined pillar microcavities [J].

Bennett, AJ ;

Unitt, DC ;

Atkinson, P ;

Ritchie, DA ;

Shields, AJ .

OPTICS EXPRESS, 2005, 13 (01) :50-55

[4] Fermi-level pinning position at the Au-InAs interface determined using ballistic electron emission microscopy [J].

Bhargava, S ;

Blank, HR ;

Narayanamurti, V ;

Kroemer, H .

APPLIED PHYSICS LETTERS, 1997, 70 (06) :759-761

[5] Kondo universal scaling for a quantum dot coupled to superconducting leads [J].

Buizert, C. ;

Oiwa, A. ;

Shibata, K. ;

Hirakawa, K. ;

Tarucha, S. .

PHYSICAL REVIEW LETTERS, 2007, 99 (13)

[6] Electric-field control of tunneling magnetoresistance effect in a Ni/InAs/Ni quantum-dot spin valve [J].

Hamaya, K. ;

Kitabatake, M. ;

Shibata, K. ;

Jung, M. ;

Kawamura, M. ;

Hirakawa, K. ;

Machida, T. ;

Taniyama, T. ;

Ishida, S. ;

Arakawa, Y. .

APPLIED PHYSICS LETTERS, 2007, 91 (02)

[7] Tunneling magnetoresistance effect in a few-electron quantum-dot spin valve [J].

Hamaya, K. ;

Kitabatake, M. ;

Shibata, K. ;

Jung, M. ;

Kawamura, M. ;

Ishida, S. ;

Taniyama, T. ;

Hirakawa, K. ;

Arakawa, Y. ;

Machida, T. .

APPLIED PHYSICS LETTERS, 2008, 93 (22)

[8] Oscillatory changes in the tunneling magnetoresistance effect in semiconductor quantum-dot spin valves [J].

Hamaya, K. ;

Kitabatake, M. ;

Shibata, K. ;

Jung, M. ;

Kawamura, M. ;

Ishida, S. ;

Taniyama, T. ;

Hirakawa, K. ;

Arakawa, Y. ;

Machida, T. .

PHYSICAL REVIEW B, 2008, 77 (08)

[9] Quantum nature of a strongly coupled single quantum dot-cavity system [J].

Hennessy, K. ;

Badolato, A. ;

Winger, M. ;

Gerace, D. ;

Atatuere, M. ;

Gulde, S. ;

Faelt, S. ;

Hu, E. L. ;

Imamoglu, A. .

NATURE, 2007, 445 (7130) :896-899

[10] Spin-half Kondo effect in a single self-assembled InAs quantum dot with and without an applied magnetic field [J].

Igarashi, Y. ;

Jung, M. ;

Yamamoto, M. ;

Oiwa, A. ;

Machida, T. ;

Hirakawa, K. ;

Tarucha, S. .

PHYSICAL REVIEW B, 2007, 76 (08)

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