X-ray irradiation induced effects on the chemical and electronic properties of MoO3 thin films

被引：23

作者：

Liao, X. ^{[1
]}

Jeong, A. R. ^{[1
]}

Wilks, R. G. ^{[1
,2
]}

Wiesner, S. ^{[1
]}

Rusu, M. ^{[1
]}

Baer, M. ^{[1
,2
,3
]}

机构：

[1] Helmholtz Zentrum Berlin Mat & Energie GmbH, Renewable Energy, Hahn Meitner Platz 1, D-14109 Berlin, Germany

[2] Helmholtz Zentrum Berlin Mat & Energie GmbH, Energy Mat In Situ Lab Berlin EMIL, Albert Einstein Str 15, D-12489 Berlin, Germany

[3] Brandenburg Tech Univ Cottbus Senftenberg, Inst Chem & Phys, Pl Deutsch Einheit 1, D-03046 Cottbus, Germany

来源：

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA | 2016年 / 212卷

关键词：

MoO3 thin films; Electronic and chemical structure; Beam damage; X-ray and UV photoelectron spectroscopy; MOLYBDENUM OXIDES; WORK FUNCTION; OXYGEN VACANCIES; GAP STATES; REDUCTION; CATALYSTS; SURFACE; XPS; WO3; PHOTOCHROMISM;

D O I：

10.1016/j.elspec.2016.08.004

中图分类号：

O433 [光谱学];

学科分类号：

0703 ; 070302 ;

摘要：

The time and photon-flux dependent x-ray irradiation induced effects on the chemical and electronic properties of MoO3 thin films have been systematically investigated by ultraviolet photoelectron spectroscopy (UPS) and x-ray photoelectron spectroscopy (XPS). After exposure to Mg K alpha, x-ray irradiation of different photon flux (realized by using different x-ray source powers: 30, 100, and 300W), the Mo 3d XPS spectra indicate a partial conversion of the Mo6+ states in MoO3 to Mo5+ states. The degree of reduction significantly depends on exposure time and x-ray source power (i.e., photon flux). To minimize x-ray irradiation induced effects on the collected data, a measurement time of 1-2 hat a low photon flux should not be exceeded. Related UPS analysis shows that no effects of UV irradiation can be detected and reveals the x-ray irradiation induced appearance of defect states above the valence band maximum (VBM). The intensity of these above-VBM states increases linearly inverse with the XPS derived Mo6+/(Mo5+ + Mo6+) ratio, suggesting an x-ray induced loss of oxygen as the common explanation for both effects. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：50 / 55

页数：6

共 50 条

[21] Properties of MoO3 films by thermal oxidation: Annealing induced phase transition [J].

Madhavi, Vempulri ;

Kondaiah, Paruchuri ;

Rayudu, Suguru Subba ;

Hussain, Obili Mahammad ;

Uthanna, Suda .

MATERIALS EXPRESS, 2013, 3 (02) :135-143

[22] Characterization of MoO3 and TixMoyOz Thin Films Prepared by Atomic Layer Deposition [J].

Maksumova, A. M. ;

Bodalev, I. S. ;

Abdulagatov, I. M. ;

Rabadanov, M. Kh. ;

Abdulagatov, A. I. .

RUSSIAN JOURNAL OF INORGANIC CHEMISTRY, 2024, 69 (01) :109-116

[23] Photochromism and Thermochromism of MoO3 Thin Films Doped with ZnSe [J].

Arvizu, M. A. ;

Morales-Luna, M. ;

Tomas, S. A. ;

Rodriguez, P. ;

Zelaya-Angel, O. .

ADVANCED SUMMER SCHOOL IN PHYSICS 2011 (EAV 2011), 2012, 1420 :151-156

[24] Physical study of Eu doped MoO3 thin films [J].

Kamoun, O. ;

Boukhachem, A. ;

Amlouk, M. ;

Ammar, S. .

JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 687 :595-603

[25] The evolution of the Mo5+ oxidation state in the thermochromic effect of MoO3 thin films deposited by rf magnetron sputtering [J].

Morales-Luna, M. ;

Tomas, S. A. ;

Arvizu, M. A. ;

Perez-Gonzalez, M. ;

Campos-Gonzalez, E. .

JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 722 :938-945

[26] Physical Investigations on (MoO3)x-(WO3)1-x Composite Thin Films [J].

Srinivasarao, K. ;

Prameela, Ch .

JOURNAL OF SURFACE SCIENCE AND TECHNOLOGY, 2019, 35 (1-2) :26-35

[27] Effect of low energy nitrogen ion irradiation on MoO3 films [J].

Thorat, Ashish ;

Tikote, Kalyani ;

Bhadane, Mahesh ;

Phatangare, Ambadas ;

Bhoraskar, Vasant ;

Dhole, Sanjay ;

Dahiwale, Shailendra .

OPTICAL MATERIALS, 2022, 128

[28] High-pressure Raman scattering and x-ray diffraction of phase transitions in MoO3 [J].

Liu, D. ;

Lei, W. W. ;

Hao, J. ;

Liu, D. D. ;

Liu, B. B. ;

Wang, X. ;

Chen, X. H. ;

Cui, Q. L. ;

Zou, G. T. ;

Liu, J. ;

Jiang, S. .

JOURNAL OF APPLIED PHYSICS, 2009, 105 (02)

[29] Valence Band Offset at MoO3/CdTe Interface Probed by X-ray Photoelectron Spectroscopy [J].

Paudel, N. R. ;

Yan, Y. .

2014 IEEE 40TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC), 2014, :2397-2399

[30] Ultraviolet irradiation effects on and depth profiles in X-ray photoelectron spectra of poly(vinylpyridine) thin films [J].

Nishiyama, Satoko ;

Tajima, Masahiro ;

Nakajima, Yoshikata ;

Hanajiri, Tatsuro ;

Yoshida, Yasuhiko .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (01) :432-437

← 1 2 3 4 5 →